Inventor
MIYAJIMA TAKESHI
JP30 patents
⚠️ This page may combine multiple inventors who share the name “MIYAJIMA TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
17 patentsUS6133587AOct 17, 2000
Silicon carbide semiconductor device and process for manufacturing same
DENSO CORP156 citations99
US5915180AJun 22, 1999
Process for producing a semiconductor device having a single thermal oxidizing step
DENSO CORP217 citations99
US6703707B1Mar 9, 2004
Semiconductor device having radiation structure
DENSO CORP151 citations98
US5976936ANov 2, 1999
Silicon carbide semiconductor device
DENSO CORP275 citations98
US5744826AApr 28, 1998
Silicon carbide semiconductor device and process for its production
DENSO CORP123 citations98
US6809348B1Oct 26, 2004
Semiconductor device and method for manufacturing the same
DENSO CORP19 citations91
US6548386B1Apr 15, 2003
Method for forming and patterning film
DENSO CORP19 citations89
US6476458B2Nov 5, 2002
Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element
DENSO CORP16 citations84
US7932132B2Apr 26, 2011
Semiconductor device and method of manufacturing the same
DENSO CORP6 citations74
US5998268ADec 7, 1999
Manufacturing method of semiconductor device with a groove
DENSO CORP10 citations72
US9368575B2Jun 14, 2016
Semiconductor device having super junction structure and method for manufacturing the same
DENSO CORP1 citations63
US7858475B2Dec 28, 2010
Method for manufacturing a vertical transistor that includes a super junction structure
DENSO CORP3 citations63
US8659082B2Feb 25, 2014
Method for manufacturing a semiconductor device having super junction structure
DENSO CORP0 citations52
US8018028B2Sep 13, 2011
Semiconductor device and method for manufacturing the same
DENSO CORP1 citations52
US8008768B2Aug 30, 2011
Semiconductor device having heat radiating configuration
DENSO CORP0 citations52
US7910411B2Mar 22, 2011
Semiconductor device and method for manufacturing the same
DENSO CORP1 citations52
US7635622B2Dec 22, 2009
Method for manufacturing a vertical transistor that includes a super junction structure
DENSO CORP1 citations52
NIPPON DENSO CO
5 patentsUS6020600AFeb 1, 2000
Silicon carbide semiconductor device with trench
NIPPON DENSO CO211 citations98
US5696396ADec 9, 1997
Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation
NIPPON DENSO CO59 citations96
US5723376AMar 3, 1998
Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects
NIPPON DENSO CO46 citations92
US6133120AOct 17, 2000
Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same
NIPPON DENSO CO19 citations87
US4881056ANov 14, 1989
Facedown-type semiconductor pressure sensor with spacer
NIPPON DENSO CO22 citations82
HITACHI CONSTRUCTION MACHINERY
5 patentsUS5005420AApr 9, 1991
Ultrasonic method for measurement of depth of surface opening flaw in solid mass
HITACHI CONSTRUCTION MACHINERY22 citations92
US4914952AApr 10, 1990
Ultrasonic method for measurement of size of any flaw within solid mass
HITACHI CONSTRUCTION MACHINERY24 citations92
US4484475ANov 27, 1984
Method of measuring contact stress at contacting surfaces of abutting solid masses
HITACHI CONSTRUCTION MACHINERY27 citations92
US4785667ANov 22, 1988
Method of measuring inclining angle of planar defect of solid material by ultrasonic wave
HITACHI CONSTRUCTION MACHINERY23 citations76
US4694698ASep 22, 1987
Method of measuring factor of stress concentration by utilizing ultrasound
HITACHI CONSTRUCTION MACHINERY12 citations74