Inventor

FENG PEIJIE

US18 patents

⚠️ This page may combine multiple inventors who share the name “FENG PEIJIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FENG PEIJIE

QUALCOMM INC

Gate-all-around (GAA) transistors with additional bottom channel for reduced parasitic capacitance and methods of fabrication

Integrated device comprising a CMOS structure comprising well-less transistors

Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same

Optimized contact structure

Semiconductor device with superlattice fin

Gate-all-around devices with reduced parasitic capacitance

Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods

Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods

Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits

Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity

Field effect transistor (FET) comprising inner spacers and voids between channels

Finger metal-oxide-metal (FMOM) capacitor

GLOBALFOUNDRIES INC

FinFET conformal junction and high EPI surface dopant concentration method and device

FinFET conformal junction and high epi surface dopant concentration method and device

FinFET conformal junction and abrupt junction with reduced damage method and device

FinFET conformal junction and abrupt junction with reduced damage method and device

MITSUBISHI ELECTRIC RES LAB

High electron mobility transistor with multiple channels

TEO KOON HOO

High electron mobility transistors with multiple channels