Inventor
LEE JUNG HYUK
KR24 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNG HYUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7907437B2Mar 15, 2011
Resistance variable memory device and method of writing data
SAMSUNG ELECTRONICS CO LTD19 citations90
US7843741B2Nov 30, 2010
Memory devices with selective pre-write verification and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD6 citations73
US10818727B2Oct 27, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations71
US8014190B2Sep 6, 2011
Resistance variable memory device and method of writing data
SAMSUNG ELECTRONICS CO LTD5 citations71
US10255959B2Apr 9, 2019
Memory devices configured to prevent read failure due to leakage current into bit line
SAMSUNG ELECTRONICS CO LTD2 citations70
US10672447B2Jun 2, 2020
Memory device and programming method
SAMSUNG ELECTRONICS CO LTD3 citations69
US9695541B2Jul 4, 2017
Drum washing machine
SAMSUNG ELECTRONICS CO LTD2 citations68
US11600353B2Mar 7, 2023
Test method for memory device, operation method of test device testing memory device, and memory device with self-test function
SAMSUNG ELECTRONICS CO LTD0 citations62
US11367501B2Jun 21, 2022
Test method for memory device, operating method of test device testing memory device, and memory device with self-test function
SAMSUNG ELECTRONICS CO LTD0 citations62
US8050083B2Nov 1, 2011
Phase change memory device and write method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US11271038B2Mar 8, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US12148784B2Nov 19, 2024
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations51
US10418414B2Sep 17, 2019
Variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11625188B2Apr 11, 2023
Nonvolatile memory device having resistive memory cells and a controller to detect fail cells, and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
LEE JUNG HYUK
3 patentsUS8102729B2Jan 24, 2012
Resistive memory device capable of compensating for variations of bit line resistances
LEE JUNG HYUK28 citations91
US8830728B2Sep 9, 2014
Resistance change memory device and current trimming method thereof
LEE JUNG HYUK12 citations82
US9013934B2Apr 21, 2015
Method of operating a nonvolatile memory by reprogramming failed cells using a reinforced program pulse in an idle state and memory system thereof
LEE JUNG HYUK3 citations61