Inventor
SHIMAMUNE YOSUKE
JP43 patents
⚠️ This page may combine multiple inventors who share the name “SHIMAMUNE YOSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU SEMICONDUCTOR LTD
8 patentsUS9112027B2Aug 18, 2015
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD9 citations92
US8853673B2Oct 7, 2014
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD15 citations92
US7875521B2Jan 25, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD23 citations92
US7791064B2Sep 7, 2010
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD18 citations92
US7985641B2Jul 26, 2011
Semiconductor device with strained transistors and its manufacture
FUJITSU SEMICONDUCTOR LTD7 citations84
US7816766B2Oct 19, 2010
Semiconductor device with compressive and tensile stresses
FUJITSU SEMICONDUCTOR LTD16 citations84
US7968414B2Jun 28, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD6 citations74
US9178034B2Nov 3, 2015
Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
FUJITSU SEMICONDUCTOR LTD2 citations63
FUJITSU MICROELECTRONICS LTD
7 patentsUS7667227B2Feb 23, 2010
Semiconductor device and fabrication method thereof
FUJITSU MICROELECTRONICS LTD77 citations99
US7579617B2Aug 25, 2009
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD18 citations92
US7683362B2Mar 23, 2010
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD13 citations84
US7626215B2Dec 1, 2009
Semiconductor device and method of manufacturing the same
FUJITSU MICROELECTRONICS LTD9 citations84
US7518188B2Apr 14, 2009
P-channel MOS transistor and fabrication process thereof
FUJITSU MICROELECTRONICS LTD10 citations84
US7679147B2Mar 16, 2010
Semiconductor device fabricated by selective epitaxial growth method
FUJITSU MICROELECTRONICS LTD4 citations72
US7476941B2Jan 13, 2009
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD2 citations63
FUKUDA MASAHIRO
7 patentsUS8455325B2Jun 4, 2013
Method of manufacturing a semiconductor device
FUKUDA MASAHIRO6 citations84
US8232191B2Jul 31, 2012
Semiconductor device manufacturing method
FUKUDA MASAHIRO8 citations84
US8455324B2Jun 4, 2013
Method of manufacturing a semiconductor device
FUKUDA MASAHIRO5 citations73
US8283226B2Oct 9, 2012
Method for manufacturing semiconductor device
FUKUDA MASAHIRO6 citations71
US8709898B2Apr 29, 2014
Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
FUKUDA MASAHIRO2 citations63
US8293622B2Oct 23, 2012
Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method
FUKUDA MASAHIRO1 citations52
US8497191B2Jul 30, 2013
Selective epitaxial growth method using halogen containing gate sidewall mask
FUKUDA MASAHIRO0 citations51
FUJITSU LTD
6 patentsUS7033868B2Apr 25, 2006
Semiconductor device and method of manufacturing same
FUJITSU LTD25 citations93
US7390707B2Jun 24, 2008
Semiconductor device fabrication method
FUJITSU LTD31 citations92
US7378305B2May 27, 2008
Semiconductor integrated circuit and fabrication process thereof
FUJITSU LTD27 citations92
US7202120B2Apr 10, 2007
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU LTD23 citations92
US7446394B2Nov 4, 2008
Semiconductor device fabricated by selective epitaxial growth method
FUJITSU LTD13 citations91
US7262465B2Aug 28, 2007
P-channel MOS transistor and fabrication process thereof
FUJITSU LTD13 citations84
SHIMAMUNE YOSUKE
5 patentsUS8466450B2Jun 18, 2013
Semiconductor device and fabrication method thereof
SHIMAMUNE YOSUKE6 citations83
US8518785B2Aug 27, 2013
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8278177B2Oct 2, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8207042B2Jun 26, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE2 citations62
US8164085B2Apr 24, 2012
Semiconductor device and production method thereof
SHIMAMUNE YOSUKE2 citations62