P

Inventor

YAN RAN

US40 patents
⚠️ This page may combine multiple inventors who share the name “YAN RAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

18 patents
US9324869B1Apr 26, 2016

Method of forming a semiconductor device and resulting semiconductor devices

GLOBALFOUNDRIES INC12 citations84
US9941348B2Apr 10, 2018

Method of forming a capacitor structure and capacitor structure

GLOBALFOUNDRIES INC2 citations73
US9881841B2Jan 30, 2018

Methods for fabricating integrated circuits with improved implantation processes

GLOBALFOUNDRIES INC2 citations73
US9748236B1Aug 29, 2017

FinFET device with enlarged channel regions

GLOBALFOUNDRIES INC4 citations73
US9466717B1Oct 11, 2016

Complex semiconductor devices of the SOI type

GLOBALFOUNDRIES INC6 citations73
US9614003B1Apr 4, 2017

Method of forming a memory device structure and memory device structure

GLOBALFOUNDRIES INC5 citations72
US9461145B2Oct 4, 2016

OPC enlarged dummy electrode to eliminate ski slope at eSiGe

GLOBALFOUNDRIES INC2 citations63
US9263270B2Feb 16, 2016

Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure

GLOBALFOUNDRIES INC2 citations62
US9087716B2Jul 21, 2015

Channel semiconductor alloy layer growth adjusted by impurity ion implantation

GLOBALFOUNDRIES INC3 citations57
US10134730B2Nov 20, 2018

FinFET device with enlarged channel regions

GLOBALFOUNDRIES INC0 citations52
US9312189B2Apr 12, 2016

Methods for fabricating integrated circuits with improved implantation processes

GLOBALFOUNDRIES INC1 citations52
US9190516B2Nov 17, 2015

Method for a uniform compressive strain layer and device thereof

GLOBALFOUNDRIES INC0 citations52
US9620589B2Apr 11, 2017

Integrated circuits and methods of fabrication thereof

GLOBALFOUNDRIES INC0 citations51
US9460955B2Oct 4, 2016

Integrated circuits with shallow trench isolations, and methods for producing the same

GLOBALFOUNDRIES INC0 citations51
US9029214B2May 12, 2015

Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts

GLOBALFOUNDRIES INC1 citations51
US8951877B2Feb 10, 2015

Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment

GLOBALFOUNDRIES INC1 citations51
US9136266B2Sep 15, 2015

Gate oxide quality for complex MOSFET devices

GLOBALFOUNDRIES INC1 citations49
US9741625B2Aug 22, 2017

Method of forming a semiconductor device with STI structures on an SOI substrate

GLOBALFOUNDRIES INC0 citations41

REALTEK SEMICONDUCTOR CORP

6 patents

ZOOM VIDEO COMMUNICATIONS INC

5 patents

AYTUR TURGUT

3 patents

GLOBALFOUNDRIES SG PTE LTD

2 patents

MARVELL INT LTD

1 patent

ZOOM COMMUNICATIONS INC

1 patent

TIANJIN BYTEDANCE TECH CO LTD

1 patent

CARROLL MICHAEL ANDREW

1 patent

UNIV READING

1 patent

HARWOOD LAURENCE M

1 patent