Inventor
KATAKAMI AKIRA
JP30 patents
⚠️ This page may combine multiple inventors who share the name “KATAKAMI AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU SEMICONDUCTOR LTD
8 patentsUS9112027B2Aug 18, 2015
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD9 citations92
US8853673B2Oct 7, 2014
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD15 citations92
US7875521B2Jan 25, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD23 citations92
US7791064B2Sep 7, 2010
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD18 citations92
US7816766B2Oct 19, 2010
Semiconductor device with compressive and tensile stresses
FUJITSU SEMICONDUCTOR LTD16 citations84
US7968414B2Jun 28, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD6 citations74
US9728468B2Aug 8, 2017
Semiconductor device and manufacturing method thereof
FUJITSU SEMICONDUCTOR LTD1 citations52
US9257425B2Feb 9, 2016
Semiconductor device and manufacturing method thereof
FUJITSU SEMICONDUCTOR LTD0 citations52
FUJITSU MICROELECTRONICS LTD
7 patentsUS7667227B2Feb 23, 2010
Semiconductor device and fabrication method thereof
FUJITSU MICROELECTRONICS LTD77 citations99
US7649232B2Jan 19, 2010
P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD37 citations92
US7579617B2Aug 25, 2009
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD18 citations92
US7683362B2Mar 23, 2010
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD13 citations84
US7626215B2Dec 1, 2009
Semiconductor device and method of manufacturing the same
FUJITSU MICROELECTRONICS LTD9 citations84
US7518188B2Apr 14, 2009
P-channel MOS transistor and fabrication process thereof
FUJITSU MICROELECTRONICS LTD10 citations84
US7476941B2Jan 13, 2009
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD2 citations63
SHIMAMUNE YOSUKE
5 patentsUS8466450B2Jun 18, 2013
Semiconductor device and fabrication method thereof
SHIMAMUNE YOSUKE6 citations83
US8518785B2Aug 27, 2013
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8278177B2Oct 2, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8207042B2Jun 26, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE2 citations62
US8164085B2Apr 24, 2012
Semiconductor device and production method thereof
SHIMAMUNE YOSUKE2 citations62
FUJITSU LTD
3 patentsUS7378305B2May 27, 2008
Semiconductor integrated circuit and fabrication process thereof
FUJITSU LTD27 citations92
US7202120B2Apr 10, 2007
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU LTD23 citations92
US7262465B2Aug 28, 2007
P-channel MOS transistor and fabrication process thereof
FUJITSU LTD13 citations84