Inventor
HATADA AKIYOSHI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “HATADA AKIYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
8 patentsUS6693002B2Feb 17, 2004
Semiconductor device and its manufacture
FUJITSU LTD27 citations93
US6586794B2Jul 1, 2003
Semiconductor device and its manufacture
FUJITSU LTD23 citations93
US7378305B2May 27, 2008
Semiconductor integrated circuit and fabrication process thereof
FUJITSU LTD27 citations92
US7202120B2Apr 10, 2007
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU LTD23 citations92
US7262465B2Aug 28, 2007
P-channel MOS transistor and fabrication process thereof
FUJITSU LTD13 citations84
US5877089AMar 2, 1999
Slurry containing manganese oxide
FUJITSU LTD9 citations73
US5763325AJun 9, 1998
Fabrication process of a semiconductor device using a slurry containing manganese oxide
FUJITSU LTD13 citations73
US6159858ADec 12, 2000
Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry
FUJITSU LTD7 citations72
FUJITSU SEMICONDUCTOR LTD
8 patentsUS9112027B2Aug 18, 2015
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD9 citations92
US8853673B2Oct 7, 2014
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD15 citations92
US7875521B2Jan 25, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD23 citations92
US7791064B2Sep 7, 2010
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD18 citations92
US7816766B2Oct 19, 2010
Semiconductor device with compressive and tensile stresses
FUJITSU SEMICONDUCTOR LTD16 citations84
US7968414B2Jun 28, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD6 citations74
US8952535B2Feb 10, 2015
Semiconductor transistor device with barrier interconnects
FUJITSU SEMICONDUCTOR LTD3 citations63
US7883960B2Feb 8, 2011
Method of manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD5 citations62
FUJITSU MICROELECTRONICS LTD
6 patentsUS7667227B2Feb 23, 2010
Semiconductor device and fabrication method thereof
FUJITSU MICROELECTRONICS LTD77 citations99
US7579617B2Aug 25, 2009
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD18 citations92
US7683362B2Mar 23, 2010
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD13 citations84
US7626215B2Dec 1, 2009
Semiconductor device and method of manufacturing the same
FUJITSU MICROELECTRONICS LTD9 citations84
US7518188B2Apr 14, 2009
P-channel MOS transistor and fabrication process thereof
FUJITSU MICROELECTRONICS LTD10 citations84
US7476941B2Jan 13, 2009
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD2 citations63
SHIMAMUNE YOSUKE
5 patentsUS8466450B2Jun 18, 2013
Semiconductor device and fabrication method thereof
SHIMAMUNE YOSUKE6 citations83
US8518785B2Aug 27, 2013
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8278177B2Oct 2, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8207042B2Jun 26, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE2 citations62
US8164085B2Apr 24, 2012
Semiconductor device and production method thereof
SHIMAMUNE YOSUKE2 citations62