Inventor
LOH WEI-YIP
US42 patents
⚠️ This page may combine multiple inventors who share the name “LOH WEI-YIP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
34 patentsUS11232947B1Jan 25, 2022
Ammonium fluoride pre-clean protection
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US11348839B2May 31, 2022
Method of manufacturing semiconductor devices with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10755917B2Aug 25, 2020
Treatment for adhesion improvement
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11342225B2May 24, 2022
Barrier-free approach for forming contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504834B2Dec 10, 2019
Contact structure and the method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11373905B2Jun 28, 2022
Semiconductor device pre-cleaning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12532721B2Jan 20, 2026
Barrier-free approach for forming contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300900B2May 13, 2025
Ammonium fluoride pre-clean protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300542B2May 13, 2025
Semiconductor device pre-cleaning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218012B2Feb 4, 2025
Method of manufacturing semiconductor devices with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166078B2Dec 10, 2024
Contact structure for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046510B2Jul 23, 2024
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009200B2Jun 11, 2024
Treatment for adhesion improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11915976B2Feb 27, 2024
Semiconductor device pre-cleaning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901229B2Feb 13, 2024
Barrier-free approach for forming contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810826B2Nov 7, 2023
Semiconductor devices with stacked silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594410B2Feb 28, 2023
Treatment for adhesion improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335774B2May 17, 2022
Contact structure for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11195791B2Dec 7, 2021
Method for forming semiconductor contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177172B2Nov 16, 2021
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031286B2Jun 8, 2021
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12300496B2May 13, 2025
Deposition window enlargement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742210B2Aug 29, 2023
Deposition window enlargement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12433006B2Sep 30, 2025
Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12272621B2Apr 8, 2025
Buried conductive structure in semiconductor substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12439625B2Oct 7, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12087642B2Sep 10, 2024
Selective dual silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11676868B2Jun 13, 2023
Selective dual silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10483164B2Nov 19, 2019
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12327788B2Jun 10, 2025
Gate to source drain interconnects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12501657B2Dec 16, 2025
Selective silicide for stacked multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
LOH WEI-YIP
3 patentsUS8436422B2May 7, 2013
Tunneling field-effect transistor with direct tunneling for enhanced tunneling current
LOH WEI-YIP11 citations80
US8421165B2Apr 16, 2013
Apparatus, system, and method for tunneling MOSFETs using self-aligned heterostructure source and isolated drain
LOH WEI-YIP5 citations71
US8178939B2May 15, 2012
Interfacial barrier for work function modification of high performance CMOS devices
LOH WEI-YIP5 citations59