Inventor
TAMURA NAOYOSHI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “TAMURA NAOYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAMURA NAOYOSHI
16 patentsUS8740477B2Jun 3, 2014
Hybrid connector
TAMURA NAOYOSHI10 citations84
US8502284B2Aug 6, 2013
Semiconductor device and method of manufacturing semiconductor device
TAMURA NAOYOSHI6 citations84
US8269256B2Sep 18, 2012
Semiconductor device and manufacturing method thereof
TAMURA NAOYOSHI11 citations84
US8247284B2Aug 21, 2012
Manufacture of semiconductor device with stress structure
TAMURA NAOYOSHI9 citations84
US8586438B2Nov 19, 2013
Semiconductor device and manufacturing method thereof
TAMURA NAOYOSHI8 citations81
US8338831B2Dec 25, 2012
Semiconductor device and manufacturing method thereof
TAMURA NAOYOSHI10 citations81
US8519486B2Aug 27, 2013
Semiconductor device having a plurality of phosphorus-doped silicon carbide layers
TAMURA NAOYOSHI4 citations63
US8232180B2Jul 31, 2012
Manufacturing method of semiconductor device comprising active region divided by STI element isolation structure
TAMURA NAOYOSHI2 citations63
US8134189B2Mar 13, 2012
Semiconductor device and method of manufacturing the same
TAMURA NAOYOSHI3 citations63
US9214524B2Dec 15, 2015
Method of manufacturing a semiconductor device
TAMURA NAOYOSHI1 citations52
US8741721B2Jun 3, 2014
Semiconductor device and manufacturing method thereof
TAMURA NAOYOSHI0 citations52
US8703596B2Apr 22, 2014
Semiconductor device and method of manufacturing semiconductor device
TAMURA NAOYOSHI0 citations52
US8551849B2Oct 8, 2013
Semiconductor device and method of manufacturing the same
TAMURA NAOYOSHI0 citations52
US8501571B2Aug 6, 2013
Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus
TAMURA NAOYOSHI0 citations52
US8247283B2Aug 21, 2012
Manufacture of semiconductor device with stress structure
TAMURA NAOYOSHI0 citations52
US8071435B2Dec 6, 2011
Manufacture of semiconductor device with stress structure
TAMURA NAOYOSHI0 citations52
FUJITSU SEMICONDUCTOR LTD
10 patentsUS9112027B2Aug 18, 2015
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD9 citations92
US8853673B2Oct 7, 2014
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD15 citations92
US7875521B2Jan 25, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD23 citations92
US7791064B2Sep 7, 2010
Semiconductor device and fabrication method thereof
FUJITSU SEMICONDUCTOR LTD18 citations92
US7816766B2Oct 19, 2010
Semiconductor device with compressive and tensile stresses
FUJITSU SEMICONDUCTOR LTD16 citations84
US7968414B2Jun 28, 2011
Semiconductor device and production method thereof
FUJITSU SEMICONDUCTOR LTD6 citations74
US7821077B2Oct 26, 2010
Semiconductor device
FUJITSU SEMICONDUCTOR LTD3 citations63
US9431285B2Aug 30, 2016
Method of manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD2 citations55
US8765560B2Jul 1, 2014
Method for manufacturing semiconductor device with multiple carbon and phosphorus ion implants
FUJITSU SEMICONDUCTOR LTD0 citations52
US7968920B2Jun 28, 2011
Semiconductor device and manufacturing method thereof
FUJITSU SEMICONDUCTOR LTD0 citations52
FUJITSU MICROELECTRONICS LTD
7 patentsUS7667227B2Feb 23, 2010
Semiconductor device and fabrication method thereof
FUJITSU MICROELECTRONICS LTD77 citations99
US7649232B2Jan 19, 2010
P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD37 citations92
US7579617B2Aug 25, 2009
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD18 citations92
US7683362B2Mar 23, 2010
Semiconductor device and production method thereof
FUJITSU MICROELECTRONICS LTD13 citations84
US7626215B2Dec 1, 2009
Semiconductor device and method of manufacturing the same
FUJITSU MICROELECTRONICS LTD9 citations84
US7518188B2Apr 14, 2009
P-channel MOS transistor and fabrication process thereof
FUJITSU MICROELECTRONICS LTD10 citations84
US7476941B2Jan 13, 2009
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU MICROELECTRONICS LTD2 citations63
FUJITSU LTD
6 patentsUS7378305B2May 27, 2008
Semiconductor integrated circuit and fabrication process thereof
FUJITSU LTD27 citations92
US7202120B2Apr 10, 2007
Semiconductor integrated circuit device and fabrication process thereof
FUJITSU LTD23 citations92
US6215163B1Apr 10, 2001
Semiconductor device and method of manufacturing the same where the nitrogen concentration in an oxynitride insulating layer is varied
FUJITSU LTD36 citations92
US5940722AAug 17, 1999
Method of manufacturing a semiconductor comprising an oxygen-containing silicon wafer
FUJITSU LTD18 citations92
US7262465B2Aug 28, 2007
P-channel MOS transistor and fabrication process thereof
FUJITSU LTD13 citations84
US7432180B2Oct 7, 2008
Method of fabricating a nickel silicide layer by conducting a thermal annealing process in a silane gas
FUJITSU LTD7 citations73
SHIMAMUNE YOSUKE
5 patentsUS8466450B2Jun 18, 2013
Semiconductor device and fabrication method thereof
SHIMAMUNE YOSUKE6 citations83
US8518785B2Aug 27, 2013
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8278177B2Oct 2, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE1 citations62
US8207042B2Jun 26, 2012
Semiconductor device and method of manufacturing the same
SHIMAMUNE YOSUKE2 citations62
US8164085B2Apr 24, 2012
Semiconductor device and production method thereof
SHIMAMUNE YOSUKE2 citations62
SOCIONEXT INC
3 patentsMOLEX LLC
2 patentsSHIMA MASASHI
1 patentShowing the top 50 of 54 patents by PatentIndex Score.