Inventor
YOSHIKAWA KUNIYOSHI
JP19 patents
Patents
19 patentsUS6335554B1Jan 1, 2002
Semiconductor Memory
TOSHIBA KK253 citations99
US6632714B2Oct 14, 2003
Method for manufacturing semiconductor memory
TOSHIBA KK103 citations98
US4929988AMay 29, 1990
Non-volatile semiconductor memory device and method of the manufacture thereof
TOSHIBA KK126 citations98
US5304829AApr 19, 1994
Nonvolatile semiconductor device
TOSHIBA KK89 citations96
US5586073ADec 17, 1996
Semiconductor device having a multi-layer channel structure
TOSHIBA KK83 citations95
US5734612AMar 31, 1998
Semiconductor memory device with a plurality of memory cells connected to bit lines and method of adjusting the same
TOSHIBA KK29 citations92
US5229632AJul 20, 1993
Electrically erasable memory device having erase-electrode connected to substrate junction
TOSHIBA KK25 citations92
US5025417AJun 18, 1991
Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
TOSHIBA KK26 citations92
US4925807AMay 15, 1990
Method of manufacturing a semiconductor device
TOSHIBA KK43 citations92
US4881108ANov 14, 1989
Semiconductor device
TOSHIBA KK31 citations92
US5210044AMay 11, 1993
Method of manufacturing a floating gate type nonvolatile memory cell having an offset region
TOSHIBA KK20 citations82
US5015601AMay 14, 1991
Method of manufacturing a nonvolatile semiconductor device
TOSHIBA KK17 citations82
US5679590AOct 21, 1997
Method for manufacturing contact hole for a nonvolatile semiconductor device
TOSHIBA KK9 citations74
US5444655AAug 22, 1995
Non-volatile semiconductor memory device with a small distribution width of cell transistor threshold voltage after erasing data
TOSHIBA KK13 citations74
US5378910AJan 3, 1995
Memory transistor having increased interelectrode capacitance
TOSHIBA KK8 citations74
US5365098ANov 15, 1994
Non-volatile semiconductor memory having improved erasure characteristics
TOSHIBA KK14 citations74
US5159431AOct 27, 1992
Nonvolatile semiconductor device with a trench isolator
TOSHIBA KK14 citations74
US5053840AOct 1, 1991
Semiconductor device having a gate electrode consisting of a plurality of layers
TOSHIBA KK19 citations74
US4885261ADec 5, 1989
Method for isolating a semiconductor element
TOSHIBA KK11 citations74