Inventor
SUEN SHU-HUEI
TW19 patents
⚠️ This page may combine multiple inventors who share the name “SUEN SHU-HUEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS10867840B2Dec 15, 2020
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11404245B2Aug 2, 2022
DC bias in plasma process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10510553B1Dec 17, 2019
Dry ashing by secondary excitation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US12237214B2Feb 25, 2025
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12153350B2Nov 26, 2024
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11796922B2Oct 24, 2023
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11735469B2Aug 22, 2023
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11322393B2May 3, 2022
Method of forming a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12217936B2Feb 4, 2025
DC bias in plasma process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11854766B2Dec 26, 2023
DC bias in plasma process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11626292B2Apr 11, 2023
Pattern formation method and method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10943791B2Mar 9, 2021
Pattern formation method and method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10755945B2Aug 25, 2020
Metal contacts on metal gates and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10157775B2Dec 18, 2018
Method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9484207B2Nov 1, 2016
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
TAIWAN SEMICONDUCTOR MFG
2 patentsUS6500725B1Dec 31, 2002
Microelectronic fabrication method providing alignment mark and isolation trench of identical depth
TAIWAN SEMICONDUCTOR MFG8 citations69
US7001836B2Feb 21, 2006
Two step trench definition procedure for formation of a dual damascene opening in a stack of insulator layers
TAIWAN SEMICONDUCTOR MFG3 citations62