Inventor
CHIN BARRY L
US44 patents
⚠️ This page may combine multiple inventors who share the name “CHIN BARRY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
27 patentsUS7081271B2Jul 25, 2006
Cyclical deposition of refractory metal silicon nitride
APPLIED MATERIALS INC124 citations99
US6919275B2Jul 19, 2005
Method of preventing diffusion of copper through a tantalum-comprising barrier layer
APPLIED MATERIALS INC87 citations99
US7048837B2May 23, 2006
End point detection for sputtering and resputtering
APPLIED MATERIALS INC68 citations97
US7253109B2Aug 7, 2007
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
APPLIED MATERIALS INC44 citations96
US7085616B2Aug 1, 2006
Atomic layer deposition apparatus
APPLIED MATERIALS INC42 citations96
US7074714B2Jul 11, 2006
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC26 citations96
US6758947B2Jul 6, 2004
Damage-free sculptured coating deposition
APPLIED MATERIALS INC47 citations96
US6605197B1Aug 12, 2003
Method of sputtering copper to fill trenches and vias
APPLIED MATERIALS INC57 citations96
US6184137B1Feb 6, 2001
Structure and method for improving low temperature copper reflow in semiconductor features
APPLIED MATERIALS INC48 citations96
US6139699AOct 31, 2000
Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
APPLIED MATERIALS INC72 citations96
US7381639B2Jun 3, 2008
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC10 citations93
US6488823B1Dec 3, 2002
Stress tunable tantalum and tantalum nitride films
APPLIED MATERIALS INC30 citations92
US7892602B2Feb 22, 2011
Cyclical deposition of refractory metal silicon nitride
APPLIED MATERIALS INC7 citations84
US8027746B2Sep 27, 2011
Atomic layer deposition apparatus
APPLIED MATERIALS INC4 citations74
US7860597B2Dec 28, 2010
Atomic layer deposition apparatus
APPLIED MATERIALS INC5 citations74
US7687909B2Mar 30, 2010
Metal / metal nitride barrier layer for semiconductor device applications
APPLIED MATERIALS INC7 citations74
US7660644B2Feb 9, 2010
Atomic layer deposition apparatus
APPLIED MATERIALS INC4 citations74
US6887353B1May 3, 2005
Tailored barrier layer which provides improved copper interconnect electromigration resistance
APPLIED MATERIALS INC9 citations74
US6793779B2Sep 21, 2004
Sputtering method for filling holes with copper
APPLIED MATERIALS INC5 citations74
US6753248B1Jun 22, 2004
Post metal barrier/adhesion film
APPLIED MATERIALS INC7 citations74
US6352926B1Mar 5, 2002
Structure for improving low temperature copper reflow in semiconductor features
APPLIED MATERIALS INC13 citations74
US9031685B2May 12, 2015
Atomic layer deposition apparatus
APPLIED MATERIALS INC1 citations63
US7989343B2Aug 2, 2011
Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
APPLIED MATERIALS INC2 citations63
US7795138B2Sep 14, 2010
Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate
APPLIED MATERIALS INC2 citations63
US6152074ANov 28, 2000
Deposition of a thin film on a substrate using a multi-beam source
APPLIED MATERIALS INC4 citations62
US9991157B2Jun 5, 2018
Method for depositing a diffusion barrier layer and a metal conductive layer
APPLIED MATERIALS INC0 citations52
US7589016B2Sep 15, 2009
Method of depositing a sculptured copper seed layer
APPLIED MATERIALS INC0 citations52
NOVELLUS SYSTEMS INC
9 patentsUS5238499AAug 24, 1993
Gas-based substrate protection during processing
NOVELLUS SYSTEMS INC411 citations99
US5230741AJul 27, 1993
Gas-based backside protection during substrate processing
NOVELLUS SYSTEMS INC118 citations98
US5882417AMar 16, 1999
Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition apparatus
NOVELLUS SYSTEMS INC90 citations97
US5843233ADec 1, 1998
Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
NOVELLUS SYSTEMS INC51 citations96
US5620525AApr 15, 1997
Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
NOVELLUS SYSTEMS INC114 citations96
US5578532ANov 26, 1996
Wafer surface protection in a gas deposition process
NOVELLUS SYSTEMS INC91 citations96
US5374594ADec 20, 1994
Gas-based backside protection during substrate processing
NOVELLUS SYSTEMS INC56 citations96
US5925411AJul 20, 1999
Gas-based substrate deposition protection
NOVELLUS SYSTEMS INC72 citations95
US5769951AJun 23, 1998
Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
NOVELLUS SYSTEMS INC51 citations95
CHIANG TONY
2 patentsUS9390970B2Jul 12, 2016
Method for depositing a diffusion barrier layer and a metal conductive layer
CHIANG TONY10 citations92
US8158511B2Apr 17, 2012
Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features
CHIANG TONY1 citations62