Inventor

MIYAI YOICHI

JP21 patents

⚠️ This page may combine multiple inventors who share the name “MIYAI YOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIYAI YOICHI

TEXAS INSTRUMENTS INC

Method of making fuse with non-corrosive termination of corrosive fuse material

Minimization-feasible word line structure for DRAM cell

Two-step sinter method utilized in conjunction with memory cell replacement by redundancies

Apparatus and method for estimating chip yield

Method of manufacturing a semiconductor device

Method of forming cross point type DRAM cell

Trench-type semiconductor memory device

Method and system of interconnecting conductive elements in an integrated circuit

Method of the simultaneous formation for the storage node contacts, bit line contacts, and the contacts for periphery circuits

Method for fabricating a semiconductor device with laser programable fuses

Semiconductor device and method of manufacturing the same

DRAM COB bit line and moat arrangement

Method for concurrently forming holes for interconnection between different conductive layers and a substrate element or circuit element close to the substrate surface

Cross point type DRAM cell composed of a pillar having an active region

Method for fabricating an open can-type stacked capacitor on an uneven surface

Method for fabricating an open can-type stacked capacitor on an uneven surface

Method for forming a self-aligned contact

Method for forming a self-aligned contact

Method for fabrication an open can-type stacked capacitor on local topology

ADVANTEST CORP

Method of repairing semiconductor memory, electron-beam memory repairing apparatus and redundancy memory circuit to which the method of repairing semiconductor memory is applicable

Method of repairing semiconductor memory, electron-beam memory repairing apparatus and redundancy memory circuit to which the method of repairing semiconductor memory is applicable