Inventor
ASAO YOSHIAKI
JP98 patents
⚠️ This page may combine multiple inventors who share the name “ASAO YOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
37 patentsUS7920412B2Apr 5, 2011
Magnetic random access memory and method of manufacturing the same
TOSHIBA KK102 citations98
US6795334B2Sep 21, 2004
Magnetic random access memory
TOSHIBA KK52 citations96
US9830968B2Nov 28, 2017
Spin orbit torque (SOT) magnetic memory cell and array
TOSHIBA KK23 citations94
US7745894B2Jun 29, 2010
Semiconductor memory device
TOSHIBA KK33 citations93
US7706175B2Apr 27, 2010
Magnetic random access memory and method of manufacturing the same
TOSHIBA KK21 citations93
US7529114B2May 5, 2009
Semiconductor memory device
TOSHIBA KK40 citations93
US7414879B2Aug 19, 2008
Semiconductor memory device
TOSHIBA KK20 citations93
US7372118B2May 13, 2008
Magnetic random access memory and method of manufacturing the same
TOSHIBA KK22 citations93
US6960815B2Nov 1, 2005
Magnetic memory device having yoke layer, and manufacturing method thereof
TOSHIBA KK29 citations93
US6927468B2Aug 9, 2005
Magnetic random access memory
TOSHIBA KK24 citations93
US6909130B2Jun 21, 2005
Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
TOSHIBA KK35 citations93
US6900490B2May 31, 2005
Magnetic random access memory
TOSHIBA KK25 citations93
US6879515B2Apr 12, 2005
Magnetic memory device having yoke layer
TOSHIBA KK23 citations93
US6797536B2Sep 28, 2004
Magnetic memory device having yoke layer, and manufacturing method
TOSHIBA KK29 citations93
US6737691B2May 18, 2004
Magnetic random access memory
TOSHIBA KK33 citations93
US6717845B2Apr 6, 2004
Magnetic memory
TOSHIBA KK33 citations93
US6661689B2Dec 9, 2003
Semiconductor memory device
TOSHIBA KK23 citations93
US6590244B2Jul 8, 2003
Semiconductor memory device using magneto resistive effect element
TOSHIBA KK49 citations93
US7919826B2Apr 5, 2011
Magnetoresistive element and manufacturing method thereof
TOSHIBA KK22 citations92
US8009456B2Aug 30, 2011
Resistance change type memory
TOSHIBA KK13 citations84
US7965542B2Jun 21, 2011
Magnetic random access memory and write method of the same
TOSHIBA KK9 citations84
US7932513B2Apr 26, 2011
Magnetic random access memory, and write method and manufacturing method of the same
TOSHIBA KK10 citations84
US7869259B2Jan 11, 2011
Resistance change memory, and data write and erase methods thereof
TOSHIBA KK13 citations84
US7376003B2May 20, 2008
Magnetic random access memory
TOSHIBA KK9 citations84
US6946712B2Sep 20, 2005
Magnetic memory device using SOI substrate
TOSHIBA KK18 citations84
US6947314B2Sep 20, 2005
Magnetic random access memory and method of manufacturing the same
TOSHIBA KK12 citations84
US6882563B2Apr 19, 2005
Magnetic memory device and method for manufacturing the same
TOSHIBA KK19 citations84
US6831855B2Dec 14, 2004
Magnetic memory
TOSHIBA KK13 citations84
US6781872B2Aug 24, 2004
Magnetic memory
TOSHIBA KK19 citations84
US6278149B1Aug 21, 2001
Plurality of trench capacitors used for the peripheral circuit
TOSHIBA KK18 citations84
US7075820B2Jul 11, 2006
Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node
TOSHIBA KK9 citations74
US7064402B2Jun 20, 2006
Magnetic random access memory
TOSHIBA KK8 citations74
US6844204B2Jan 18, 2005
Magnetic random access memory
TOSHIBA KK11 citations74
US6831857B2Dec 14, 2004
Magnetic memory
TOSHIBA KK6 citations74
US6807094B2Oct 19, 2004
Magnetic memory
TOSHIBA KK9 citations74
US5032528AJul 16, 1991
Method of forming a contact hole in semiconductor integrated circuit
TOSHIBA KK10 citations74
US9263501B1Feb 16, 2016
Memory device and method of manufacturing the same
TOSHIBA KK3 citations73
ASAO YOSHIAKI
3 patentsIWAYAMA MASAYOSHI
2 patentsKAJIYAMA TAKESHI
2 patentsHOSOTANI KEIJI
2 patentsSATO MOTOYUKI
1 patentSUGIURA KUNIAKI
1 patentYAMANAKA TAKAYA
1 patentWATANABE TOSHIHARU
1 patentShowing the top 50 of 98 patents by PatentIndex Score.