Inventor
CHOI SUK-HUN
KR24 patents
⚠️ This page may combine multiple inventors who share the name “CHOI SUK-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7291556B2Nov 6, 2007
Method for forming small features in microelectronic devices using sacrificial layers
SAMSUNG ELECTRONICS CO LTD118 citations97
US8921940B2Dec 30, 2014
Semiconductor device and a method for fabricating the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US8034705B2Oct 11, 2011
Method of forming a seam-free tungsten plug
SAMSUNG ELECTRONICS CO LTD22 citations92
US7666789B2Feb 23, 2010
Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US7265050B2Sep 4, 2007
Methods for fabricating memory devices using sacrificial layers
SAMSUNG ELECTRONICS CO LTD21 citations92
US7223693B2May 29, 2007
Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same
SAMSUNG ELECTRONICS CO LTD21 citations92
US7803657B2Sep 28, 2010
Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US7678625B2Mar 16, 2010
Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristics
SAMSUNG ELECTRONICS CO LTD8 citations82
US8357613B2Jan 22, 2013
Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
SAMSUNG ELECTRONICS CO LTD6 citations73
US7867902B2Jan 11, 2011
Methods of forming a contact structure
SAMSUNG ELECTRONICS CO LTD3 citations62
US7622379B2Nov 24, 2009
Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7517703B2Apr 14, 2009
Method for forming ferroelectric memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US8008172B2Aug 30, 2011
Methods of forming semiconductor devices including multistage planarization and crystalization of a semiconductor layer
SAMSUNG ELECTRONICS CO LTD3 citations61
US7612359B2Nov 3, 2009
Microelectronic devices using sacrificial layers and structures fabricated by same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7932163B2Apr 26, 2011
Methods of forming stacked semiconductor devices with single-crystal semiconductor regions
SAMSUNG ELECTRONICS CO LTD0 citations51
US9034742B2May 19, 2015
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48
CHOI SUK-HUN
4 patentsUS8575753B2Nov 5, 2013
Semiconductor device having a conductive structure including oxide and non oxide portions
CHOI SUK-HUN43 citations92
US8580648B2Nov 12, 2013
Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure
CHOI SUK-HUN8 citations82
US8148710B2Apr 3, 2012
Phase-change memory device using a variable resistance structure
CHOI SUK-HUN3 citations61
US8124526B2Feb 28, 2012
Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same
CHOI SUK-HUN1 citations51