Inventor
SON YOON-HO
KR22 patents
⚠️ This page may combine multiple inventors who share the name “SON YOON-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS7291556B2Nov 6, 2007
Method for forming small features in microelectronic devices using sacrificial layers
SAMSUNG ELECTRONICS CO LTD118 citations97
US8034705B2Oct 11, 2011
Method of forming a seam-free tungsten plug
SAMSUNG ELECTRONICS CO LTD22 citations92
US7666789B2Feb 23, 2010
Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US7265050B2Sep 4, 2007
Methods for fabricating memory devices using sacrificial layers
SAMSUNG ELECTRONICS CO LTD21 citations92
US7223693B2May 29, 2007
Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same
SAMSUNG ELECTRONICS CO LTD21 citations92
US9570316B2Feb 14, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations83
US7803657B2Sep 28, 2010
Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US10418366B2Sep 17, 2019
Semiconductor devices including enlarged contact hole and methods of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations82
US8357613B2Jan 22, 2013
Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
SAMSUNG ELECTRONICS CO LTD6 citations73
US10297495B2May 21, 2019
Method of manufactuing semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10290537B2May 14, 2019
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations72
US10916549B2Feb 9, 2021
Semiconductor devices including enlarged contact hole and methods of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US7078241B2Jul 18, 2006
Methods of forming ferroelectric capacitors using separate polishing processes
SAMSUNG ELECTRONICS CO LTD6 citations63
US7867902B2Jan 11, 2011
Methods of forming a contact structure
SAMSUNG ELECTRONICS CO LTD3 citations62
US7622379B2Nov 24, 2009
Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7517703B2Apr 14, 2009
Method for forming ferroelectric memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US11329053B2May 10, 2022
Semiconductor devices including enlarged contact hole and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US8962455B2Feb 24, 2015
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations60
US10957647B2Mar 23, 2021
Integrated circuit devices including a boron-containing insulating pattern
SAMSUNG ELECTRONICS CO LTD1 citations59
US7612359B2Nov 3, 2009
Microelectronic devices using sacrificial layers and structures fabricated by same
SAMSUNG ELECTRONICS CO LTD0 citations52