Inventor

CHO SUNG-LAE

KR42 patents

⚠️ This page may combine multiple inventors who share the name “CHO SUNG-LAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHO SUNG-LAE

SAMSUNG ELECTRONICS CO LTD

Method for forming small features in microelectronic devices using sacrificial layers

Method of forming a phase change memory device

Methods of forming a semiconductor device including a phase change material layer

Phase changeable memory cells and methods of forming the same

Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures

Phase-change memory device having a barrier layer and manufacturing method

Methods for fabricating memory devices using sacrificial layers

Apparatus for providing reference voltages to memory modules in a memory system

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Method of forming semiconductor device having self-aligned plug

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

Phase change memory device including resistant material

Method of manufacturing a phase change memory device

Methods of forming magnetic memory devices including ferromagnetic spacers

Semiconductor device and method of fabricating the same

Methods of fabricating semiconductor device including phase change layer

Variable resistance non-volatile memory cells and methods of fabricating same

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

Microelectronic devices using sacrificial layers and structures fabricated by same

Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same

Gap filling method and method for forming semiconductor memory device using the same

SK HYNIX INC

Semiconductor device and manufacturing method of the semiconductor device

Semiconductor device and manufacturing method of the semiconductor device

Chalcogenide material, variable resistance memory device and electronic device

Chalcogenide material and semiconductor device including the same

AN HYEONG-GEUN

Memory cells including resistance variable material patterns of different compositions

Nonvolatile memory device using variable resistive element

BAE BYOUNG-JAE

Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

OH GYU-HWAN

Method of forming semiconductor device having self-aligned plug

G MAN CO LTD

Functional shoe

KIM DO-HYUNG

Variable resistance material layers and variable resistance memory devices including the same

PARK JEONG-HEE

Method of forming resistance variable memory device

KIM IK-SOO

Multi-level memory device using resistance material

PARK HYE-YOUNG

Methods of forming a material layer and methods of fabricating a memory device

PARK YOUNG-LIM

Phase change memory device

LEE JIN-IL

Methods of forming a phase change memory device

UNIV ULSAN FOUND IND COOP

Mini hot press apparatus