Inventor
KIM HYUNG DONG
KR23 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUNG DONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS6724242B2Apr 20, 2004
Pump circuits and methods for integrated circuits including first and second oscillators and first and second pumps
SAMSUNG ELECTRONICS CO LTD34 citations92
US5768174AJun 16, 1998
Integrated circuit memory devices having metal straps to improve word line driver reliability
SAMSUNG ELECTRONICS CO LTD22 citations92
US7365571B2Apr 29, 2008
Input buffer with wide input voltage range
SAMSUNG ELECTRONICS CO LTD16 citations84
US6856563B2Feb 15, 2005
Semiconductor memory device for enhancing bitline precharge time
SAMSUNG ELECTRONICS CO LTD16 citations84
US6535447B2Mar 18, 2003
Semiconductor memory device and voltage level control method thereof
SAMSUNG ELECTRONICS CO LTD17 citations84
US6426902B1Jul 30, 2002
Semiconductor memory device having redundancy circuit capable of improving redundancy efficiency
SAMSUNG ELECTRONICS CO LTD17 citations84
US7016248B2Mar 21, 2006
Method and apparatus for controlling a high voltage generator in a wafer burn-in test
SAMSUNG ELECTRONICS CO LTD12 citations83
US6707738B2Mar 16, 2004
Semiconductor memory device having mesh-type structure of precharge voltage line
SAMSUNG ELECTRONICS CO LTD14 citations83
US6301171B2Oct 9, 2001
Semiconductor memory device capable of reducing data test time in pipeline
SAMSUNG ELECTRONICS CO LTD14 citations74
US9865495B2Jan 9, 2018
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US7173872B2Feb 6, 2007
Method and apparatus for controlling a high voltage generator in a wafer burn-in test
SAMSUNG ELECTRONICS CO LTD7 citations72
US5886933AMar 23, 1999
Boost voltage generator for controlling a memory cell array
SAMSUNG ELECTRONICS CO LTD2 citations63
US5742197AApr 21, 1998
Boosting voltage level detector for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US7324399B2Jan 29, 2008
Refresh control circuit and method for performing a repetition refresh operation and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US7476983B2Jan 13, 2009
Semiconductor device including wire bonding pads and pad layout method
SAMSUNG ELECTRONICS CO LTD2 citations59
US5640360AJun 17, 1997
Address buffer of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations42
US8051341B2Nov 1, 2011
Semiconductor memory device having test address generating circuit and method of testing semiconductor memory device having a test address generating circuit
SAMSUNG ELECTRONICS CO LTD0 citations33