Inventor

CHEN CHANGYUAN

US38 patents

⚠️ This page may combine multiple inventors who share the name “CHEN CHANGYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN CHANGYUAN

SANDISK TECHNOLOGIES INC

In-situ block folding for nonvolatile memory

Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effect

Temperature dependent sensing scheme to counteract cross-temperature threshold voltage distribution widening

In-situ block folding for nonvolatile memory

Self-detecting a heating event to non-volatile storage

Nonvolatile storage reflow detection

Programming non-volatile storage with fast bit detection and verify skip

Memory system with unverified program step

Data storage device having reflow awareness

SANDISK TECHNOLOGIES LLC

Apparatus and method for preconditioning currents to reduce errors in sensing for non-volatile memory

Cell current based bit line voltage

System solution for first read issue using time dependent read voltages

Three dimensional NAND memory device with drain select gate electrode shared between multiple strings

Erase speed based word line control

Programming to minimize cross-temperature threshold voltage widening

Memory device with reduced neighbor word line interference using adjustable voltage on source-side unselected word line

Erase for partially programmed blocks in non-volatile memory

Non-volatile memory with methods to reduce creep-up field between dummy control gate and select gate

SILICON STORAGE TECH INC

Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

Bi-directional read/program non-volatile floating gate memory array, and method of formation

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground array

Method of programming a continuous-channel flash memory device

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

WESTERN DIGITAL TECH INC

System and method for programming a memory device with multiple writes without an intervening erase

Memory write verification using temperature compensation

Post write erase conditioning

Post write erase conditioning

Post write erase conditioning

System and method for string-based erase verify to create partial good blocks

CHEN CHANGYUAN

Programming non-volatile storage with fast bit detection and verify skip

Programming non-volatile storage with fast bit detection and verify skip

Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture

WIDJAJA YUNIARTO

Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing

SANDISK CORP

Hybrid programming methods and systems for non-volatile memory storage elements