Inventor
LIN YA-FEN
US22 patents
⚠️ This page may combine multiple inventors who share the name “LIN YA-FEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SILICON STORAGE TECH INC
12 patentsUS7050316B1May 23, 2006
Differential non-volatile content addressable memory cell and array using phase changing resistor storage elements
SILICON STORAGE TECH INC78 citations97
US7403418B2Jul 22, 2008
Word line voltage boosting circuit and a memory array incorporating same
SILICON STORAGE TECH INC42 citations92
US7247907B2Jul 24, 2007
Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
SILICON STORAGE TECH INC24 citations92
US7544569B2Jun 9, 2009
Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
SILICON STORAGE TECH INC9 citations84
US7723774B2May 25, 2010
Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufacture
SILICON STORAGE TECH INC6 citations74
US7242051B2Jul 10, 2007
Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
SILICON STORAGE TECH INC9 citations73
US7351613B2Apr 1, 2008
Method of trimming semiconductor elements with electrical resistance feedback
SILICON STORAGE TECH INC7 citations72
US9449693B2Sep 20, 2016
Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
SILICON STORAGE TECH INC2 citations62
US7826267B2Nov 2, 2010
Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground array
SILICON STORAGE TECH INC5 citations60
US9892790B2Feb 13, 2018
Method of programming a continuous-channel flash memory device
SILICON STORAGE TECH INC0 citations52
US7808839B2Oct 5, 2010
Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
SILICON STORAGE TECH INC0 citations52
US7790518B2Sep 7, 2010
Method of trimming semiconductor elements with electrical resistance feedback
SILICON STORAGE TECH INC0 citations51
CYPRESS SEMICONDUCTOR CORP
3 patentsUS9570458B2Feb 14, 2017
Gate fringing effect based channel formation for semiconductor device
CYPRESS SEMICONDUCTOR CORP5 citations83
US9514824B2Dec 6, 2016
Partial local self boosting for NAND
CYPRESS SEMICONDUCTOR CORP1 citations52
US10297606B2May 21, 2019
Gate fringing effect based channel formation for semiconductor device
CYPRESS SEMICONDUCTOR CORP0 citations51