Inventor
KIM ANDREW-TAE
KR28 patents
⚠️ This page may combine multiple inventors who share the name “KIM ANDREW-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS10615112B2Apr 7, 2020
MIM capacitor for improved process defect tolerance
IBM8 citations84
US11489118B2Nov 1, 2022
Reliable resistive random access memory
IBM2 citations73
US11276748B2Mar 15, 2022
Switchable metal insulator metal capacitor
IBM3 citations73
US10741441B2Aug 11, 2020
Collar formation for chamfer-less and chamfered vias
IBM2 citations73
US11647681B2May 9, 2023
Fabrication of phase change memory cell in integrated circuit
IBM0 citations62
US10971447B2Apr 6, 2021
BEOL electrical fuse
IBM0 citations62
US10930589B2Feb 23, 2021
Advanced interconnects containing an IMT liner
IBM0 citations62
US10903117B2Jan 26, 2021
Fabricating vias with lower resistance
IBM0 citations62
US10811353B2Oct 20, 2020
Sub-ground rule e-Fuse structure
IBM1 citations62
US11133462B2Sep 28, 2021
Bottom electrode structure and method of forming the same
IBM0 citations52
US10840447B2Nov 17, 2020
Fabrication of phase change memory cell in integrated circuit
IBM0 citations52
US10770393B2Sep 8, 2020
BEOL thin film resistor
IBM0 citations52
US10651083B2May 12, 2020
Graded interconnect cap
IBM0 citations52
US10468346B2Nov 5, 2019
Advanced interconnects containing an IMT liner
IBM0 citations52
SAMSUNG ELECTRONICS CO LTD
6 patentsUS7867867B2Jan 11, 2011
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US7638423B2Dec 29, 2009
Semiconductor device and method of forming wires of semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
US8384131B2Feb 26, 2013
Semiconductor device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US8013420B2Sep 6, 2011
Electrical fuse device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7892966B2Feb 22, 2011
Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7888749B2Feb 15, 2011
Semiconductor devices having selectively tensile stressed gate electrodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
TEXAS INSTRUMENTS INC
3 patentsUS6762501B1Jul 13, 2004
Low stress integrated circuit copper interconnect structures
TEXAS INSTRUMENTS INC9 citations73
US7387960B2Jun 17, 2008
Dual depth trench termination method for improving Cu-based interconnect integrity
TEXAS INSTRUMENTS INC2 citations53
US7811893B2Oct 12, 2010
Shallow trench isolation stress adjuster for MOS transistor
TEXAS INSTRUMENTS INC0 citations40