P

Inventor

SHIN HONG-JAE

KR61 patents
⚠️ This page may combine multiple inventors who share the name “SHIN HONG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US6333260B1Dec 25, 2001

Semiconductor device having improved metal line structure and manufacturing method therefor

SAMSUNG ELECTRONICS CO LTD89 citations97
US6277764B1Aug 21, 2001

Interlayered dielectric layer of semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD20 citations93
US7183195B2Feb 27, 2007

Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler

SAMSUNG ELECTRONICS CO LTD24 citations92
US6861347B2Mar 1, 2005

Method for forming metal wiring layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD31 citations92
US6828229B2Dec 7, 2004

Method of manufacturing interconnection line in semiconductor device

SAMSUNG ELECTRONICS CO LTD33 citations92
US6485815B1Nov 26, 2002

Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations92
US6483162B2Nov 19, 2002

Semiconductor device having improved metal line structure and manufacturing method therefor

SAMSUNG ELECTRONICS CO LTD18 citations92
US6432843B1Aug 13, 2002

Methods of manufacturing integrated circuit devices in which a spin on glass insulation layer is dissolved so as to recess the spin on glass insulation layer from the upper surface of a pattern

SAMSUNG ELECTRONICS CO LTD26 citations92
US6218079B1Apr 17, 2001

Method for metalization by dual damascene process using photosensitive polymer

SAMSUNG ELECTRONICS CO LTD17 citations92
US5629238AMay 13, 1997

Method for forming conductive line of semiconductor device

SAMSUNG ELECTRONICS CO LTD31 citations92
US7687915B2Mar 30, 2010

Semiconductor device having crack stop structure

SAMSUNG ELECTRONICS CO LTD9 citations84
US6815331B2Nov 9, 2004

Method for forming metal wiring layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD20 citations84
US6368906B1Apr 9, 2002

Method of planarization using selecting curing of SOG layer

SAMSUNG ELECTRONICS CO LTD12 citations74
US6294315B2Sep 25, 2001

Method of forming a metal wiring by a dual damascene process using a photosensitive polymer

SAMSUNG ELECTRONICS CO LTD13 citations74
US8384131B2Feb 26, 2013

Semiconductor device and methods of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US7642148B2Jan 5, 2010

Methods of producing semiconductor devices including multiple stress films in interface area

SAMSUNG ELECTRONICS CO LTD7 citations73
US9281240B2Mar 8, 2016

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations70
US8993436B2Mar 31, 2015

Method for fabricating semiconductor device that includes forming passivation film along side wall of via hole

SAMSUNG ELECTRONICS CO LTD4 citations68
US7323407B2Jan 29, 2008

Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material

SAMSUNG ELECTRONICS CO LTD8 citations68
US8013420B2Sep 6, 2011

Electrical fuse device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7855126B2Dec 21, 2010

Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US6936533B2Aug 30, 2005

Method of fabricating semiconductor devices having low dielectric interlayer insulation layer

SAMSUNG ELECTRONICS CO LTD6 citations63
US7785951B2Aug 31, 2010

Methods of forming integrated circuit devices having tensile and compressive stress layers therein and devices formed thereby

SAMSUNG ELECTRONICS CO LTD3 citations62
US7759185B2Jul 20, 2010

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US7706159B2Apr 27, 2010

Charge pump, DC-DC converter, and method thereof

SAMSUNG ELECTRONICS CO LTD2 citations62
US7655525B2Feb 2, 2010

Semiconductor device free of gate spacer stress and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US7635645B2Dec 22, 2009

Method for forming interconnection line in semiconductor device and interconnection line structure

SAMSUNG ELECTRONICS CO LTD6 citations62
US7192864B2Mar 20, 2007

Method of forming interconnection lines for semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations62
US7972958B2Jul 5, 2011

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations60
US8357576B2Jan 22, 2013

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations56
US7989335B2Aug 2, 2011

Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns

SAMSUNG ELECTRONICS CO LTD0 citations52
US7410896B2Aug 12, 2008

Semiconductor device having low-k dielectric film in pad region and method for manufacture thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US7015589B2Mar 21, 2006

Semiconductor device having low-k dielectric film in pad region

SAMSUNG ELECTRONICS CO LTD1 citations52

LG DISPLAY CO LTD

4 patents

KIM JIN-HO

2 patents

SHIN HONG-JAE

2 patents

SHIN DONG-SUK

2 patents

SONY CORP

1 patent

HANA MICRON INC

1 patent

KIM TAE-WHAN

1 patent

LEE KYOUNG-WOO

1 patent

SAMUNG ELECTRONICS CO LTD

1 patent

LEE SUN-JUNG

1 patent

CHANG CHONG-KWANG

1 patent

Showing the top 50 of 61 patents by PatentIndex Score.