Inventor
SHIN HONG-JAE
KR61 patents
⚠️ This page may combine multiple inventors who share the name “SHIN HONG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS6333260B1Dec 25, 2001
Semiconductor device having improved metal line structure and manufacturing method therefor
SAMSUNG ELECTRONICS CO LTD89 citations97
US6277764B1Aug 21, 2001
Interlayered dielectric layer of semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations93
US7183195B2Feb 27, 2007
Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler
SAMSUNG ELECTRONICS CO LTD24 citations92
US6861347B2Mar 1, 2005
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations92
US6828229B2Dec 7, 2004
Method of manufacturing interconnection line in semiconductor device
SAMSUNG ELECTRONICS CO LTD33 citations92
US6485815B1Nov 26, 2002
Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US6483162B2Nov 19, 2002
Semiconductor device having improved metal line structure and manufacturing method therefor
SAMSUNG ELECTRONICS CO LTD18 citations92
US6432843B1Aug 13, 2002
Methods of manufacturing integrated circuit devices in which a spin on glass insulation layer is dissolved so as to recess the spin on glass insulation layer from the upper surface of a pattern
SAMSUNG ELECTRONICS CO LTD26 citations92
US6218079B1Apr 17, 2001
Method for metalization by dual damascene process using photosensitive polymer
SAMSUNG ELECTRONICS CO LTD17 citations92
US5629238AMay 13, 1997
Method for forming conductive line of semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations92
US7687915B2Mar 30, 2010
Semiconductor device having crack stop structure
SAMSUNG ELECTRONICS CO LTD9 citations84
US6815331B2Nov 9, 2004
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD20 citations84
US6368906B1Apr 9, 2002
Method of planarization using selecting curing of SOG layer
SAMSUNG ELECTRONICS CO LTD12 citations74
US6294315B2Sep 25, 2001
Method of forming a metal wiring by a dual damascene process using a photosensitive polymer
SAMSUNG ELECTRONICS CO LTD13 citations74
US8384131B2Feb 26, 2013
Semiconductor device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7642148B2Jan 5, 2010
Methods of producing semiconductor devices including multiple stress films in interface area
SAMSUNG ELECTRONICS CO LTD7 citations73
US9281240B2Mar 8, 2016
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations70
US8993436B2Mar 31, 2015
Method for fabricating semiconductor device that includes forming passivation film along side wall of via hole
SAMSUNG ELECTRONICS CO LTD4 citations68
US7323407B2Jan 29, 2008
Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material
SAMSUNG ELECTRONICS CO LTD8 citations68
US8013420B2Sep 6, 2011
Electrical fuse device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7855126B2Dec 21, 2010
Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US6936533B2Aug 30, 2005
Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
SAMSUNG ELECTRONICS CO LTD6 citations63
US7785951B2Aug 31, 2010
Methods of forming integrated circuit devices having tensile and compressive stress layers therein and devices formed thereby
SAMSUNG ELECTRONICS CO LTD3 citations62
US7759185B2Jul 20, 2010
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7706159B2Apr 27, 2010
Charge pump, DC-DC converter, and method thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US7655525B2Feb 2, 2010
Semiconductor device free of gate spacer stress and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7635645B2Dec 22, 2009
Method for forming interconnection line in semiconductor device and interconnection line structure
SAMSUNG ELECTRONICS CO LTD6 citations62
US7192864B2Mar 20, 2007
Method of forming interconnection lines for semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7972958B2Jul 5, 2011
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations60
US8357576B2Jan 22, 2013
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations56
US7989335B2Aug 2, 2011
Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns
SAMSUNG ELECTRONICS CO LTD0 citations52
US7410896B2Aug 12, 2008
Semiconductor device having low-k dielectric film in pad region and method for manufacture thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US7015589B2Mar 21, 2006
Semiconductor device having low-k dielectric film in pad region
SAMSUNG ELECTRONICS CO LTD1 citations52
LG DISPLAY CO LTD
4 patentsUS12482427B2Nov 25, 2025
Display device including gate driving circuit and link line
LG DISPLAY CO LTD0 citations62
US12499819B2Dec 16, 2025
Gate driving circuit and display device including the same
LG DISPLAY CO LTD1 citations61
US12555544B2Feb 17, 2026
Gate driving circuit and display device including the same
LG DISPLAY CO LTD0 citations52
US9142669B2Sep 22, 2015
Thin film transistor substrate having a thin film transistor having multiple top gates and organic light emitting device using the same
LG DISPLAY CO LTD0 citations52
KIM JIN-HO
2 patentsSHIN HONG-JAE
2 patentsSHIN DONG-SUK
2 patentsSONY CORP
1 patentHANA MICRON INC
1 patentKIM TAE-WHAN
1 patentLEE KYOUNG-WOO
1 patentSAMUNG ELECTRONICS CO LTD
1 patentLEE SUN-JUNG
1 patentCHANG CHONG-KWANG
1 patentShowing the top 50 of 61 patents by PatentIndex Score.