Inventor

RUSSELL NOEL

US30 patents

⚠️ This page may combine multiple inventors who share the name “RUSSELL NOEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RUSSELL NOEL

TEL EPION INC

Method for treating non-planar structures using gas cluster ion beam processing

Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices

Method of forming semiconductor devices containing metal cap layers

Method to improve a copper/dielectric interface in semiconductor devices

Hybrid corrective processing system and method

Method to alter silicide properties using GCIB treatment

Method to alter silicide properties using GCIB treatment

Method of forming semiconductor devices containing metal cap layers

Hybrid corrective processing system and method

Process gas enhancement for beam treatment of a substrate

Method of surface profile correction using gas cluster ion beam

Multi-step location specific process for substrate edge profile correction for GCIB system

Multi-step location specific process for substrate edge profile correction for GCIB system

Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system

Apparatus and methods for implementing predicted systematic error correction in location specific processing

Sidewall spacer patterning method using gas cluster ion beam

TEXAS INSTRUMENTS INC

PVD deposition process for CVD aluminum liner processing

Methods and semiconductor devices with wiring layer fill structures to improve planarization uniformity

Method for forming titanium aluminum nitride layers

Metal-halogen physical vapor deposition for semiconductor device defect reduction

Metal-germanium physical vapor deposition for semiconductor device defect reduction

Metal-germanium physical vapor deposition for semiconductor device defect reduction

RUSSELL NOEL

Method to alter silicide properties using GCIB treatment

Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices

Method to alter silicide properties using GCIB treatment

HAUTALA JOHN J

Method and system for tilting a substrate during gas cluster ion beam processing

Ultra-thin film formation using gas cluster ion beam processing

TOKYO ELECTRON LTD

Methods for additive formation of a STT MRAM stack

Methods for additive formation of a STT MRAM stack

GRAF MICHAEL

Gas cluster ion beam system with rapid gas switching apparatus