Inventor
TAMURA AKIYOSHI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “TAMURA AKIYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
21 patentsUS5616947AApr 1, 1997
Semiconductor device having an MIS structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD565 citations99
US5523623AJun 4, 1996
Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US5336361AAug 9, 1994
Method of manufacturing an MIS-type semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US4992387AFeb 12, 1991
Method for fabrication of self-aligned asymmetric field effect transistors
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD37 citations92
US5907177AMay 25, 1999
Semiconductor device having a tapered gate electrode
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations81
US7001820B1Feb 21, 2006
Heterojunction bipolar transistor and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US6903388B2Jun 7, 2005
Hetero-junction bipolar transistor and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations73
US6037200AMar 14, 2000
Compound semiconductor device and fabrication method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations72
US7012337B2Mar 14, 2006
Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via hole
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations70
US6982141B2Jan 3, 2006
Semiconductor device and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations70
US4752592AJun 21, 1988
Annealing method for compound semiconductor substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations70
US7012285B2Mar 14, 2006
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations68
US7144765B2Dec 5, 2006
Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations62
US7091528B2Aug 15, 2006
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations62
US6967360B2Nov 22, 2005
Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations62
US7301181B2Nov 27, 2007
Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
US5942772AAug 24, 1999
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
US5162242ANov 10, 1992
Method for annealing compound semiconductor devices
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
US7176099B2Feb 13, 2007
Hetero-junction bipolar transistor and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations51
US7238542B2Jul 3, 2007
Manufacturing method for compound semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations49
US6953729B2Oct 11, 2005
Heterojunction field effect transistor and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations42
PANASONIC CORP
5 patentsUS7989845B2Aug 2, 2011
Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof
PANASONIC CORP9 citations83
US7728357B2Jun 1, 2010
Heterojunction bipolar transistor and manufacturing method thereof
PANASONIC CORP19 citations83
US8716756B2May 6, 2014
Semiconductor device
PANASONIC CORP2 citations62
US8017975B2Sep 13, 2011
Semiconductor device
PANASONIC CORP2 citations62
US7495268B2Feb 24, 2009
Semiconductor device and manufacturing method of the same
PANASONIC CORP2 citations62