Inventor
KIM KEE-WON
KR40 patents
⚠️ This page may combine multiple inventors who share the name “KIM KEE-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS8729647B2May 20, 2014
Thermally stable magnetic tunnel junction cell and memory device including the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7952905B2May 31, 2011
Data storage device using magnetic domain wall movement and method of operating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7751223B2Jul 6, 2010
Magnetic memory devices using magnetic domain motion
SAMSUNG ELECTRONICS CO LTD12 citations84
US7738278B2Jun 15, 2010
Magnetic memory device using magnetic domain motion
SAMSUNG ELECTRONICS CO LTD18 citations84
US7439770B2Oct 21, 2008
Magnetic tunneling junction based logic circuits and methods of operating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7554774B2Jun 30, 2009
Magnetic resistance device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US7755930B2Jul 13, 2010
Semiconductor memory device and magneto-logic circuit
SAMSUNG ELECTRONICS CO LTD7 citations74
US6894920B2May 17, 2005
Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM
SAMSUNG ELECTRONICS CO LTD9 citations74
US9570674B2Feb 14, 2017
Magnetic device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9230623B2Jan 5, 2016
Magnetic memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US9837468B2Dec 5, 2017
Magnetoresistive random access memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US7928524B2Apr 19, 2011
Magnetoresistive element
SAMSUNG ELECTRONICS CO LTD5 citations63
US7548449B2Jun 16, 2009
Magnetic memory device and methods thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US10249817B2Apr 2, 2019
Magnetic device
SAMSUNG ELECTRONICS CO LTD0 citations52
US8836057B2Sep 16, 2014
Magnetoresistive elements having protrusion from free layer and memory devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7672154B2Mar 2, 2010
Semiconductor memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10096650B2Oct 9, 2018
Method of manufacturing magnetoresistive random access memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10854677B2Dec 1, 2020
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations50
LEE SUNG-CHUL
5 patentsUS8598957B2Dec 3, 2013
Oscillators and methods of manufacturing and operating the same
LEE SUNG-CHUL10 citations84
US8427246B2Apr 23, 2013
Oscillators and methods of manufacturing and operating the same
LEE SUNG-CHUL9 citations84
US8754717B2Jun 17, 2014
Oscillators and methods of operating the same
LEE SUNG-CHUL5 citations70
US9437654B2Sep 6, 2016
Magnetic memory devices
LEE SUNG-CHUL1 citations52
US8848432B2Sep 30, 2014
Magnetoresistive elements and memory devices including the same
LEE SUNG-CHUL0 citations52
KIM KWANG-SEOK
4 patentsUS8411498B2Apr 2, 2013
Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same
KIM KWANG-SEOK53 citations95
US8421545B2Apr 16, 2013
Oscillators and methods of operating the same
KIM KWANG-SEOK6 citations73
US8144504B2Mar 27, 2012
Method of operating magnetic random access memory device
KIM KWANG-SEOK6 citations73
US8803266B2Aug 12, 2014
Storage nodes, magnetic memory devices, and methods of manufacturing the same
KIM KWANG-SEOK1 citations52
PI UNG-HWAN
4 patentsUS9508925B2Nov 29, 2016
Magnetic memory device
PI UNG-HWAN11 citations83
US9236105B2Jan 12, 2016
Magnetic memory devices and methods of writing data to the same
PI UNG-HWAN9 citations83
US9530478B2Dec 27, 2016
Memory device using spin hall effect and methods of manufacturing and operating the memory device
PI UNG-HWAN5 citations72
US8847692B2Sep 30, 2014
Oscillators and method of operating the same
PI UNG-HWAN3 citations62