P

Inventor

KIM KEE-WON

KR40 patents
⚠️ This page may combine multiple inventors who share the name “KIM KEE-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

18 patents
US8729647B2May 20, 2014

Thermally stable magnetic tunnel junction cell and memory device including the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7952905B2May 31, 2011

Data storage device using magnetic domain wall movement and method of operating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7751223B2Jul 6, 2010

Magnetic memory devices using magnetic domain motion

SAMSUNG ELECTRONICS CO LTD12 citations84
US7738278B2Jun 15, 2010

Magnetic memory device using magnetic domain motion

SAMSUNG ELECTRONICS CO LTD18 citations84
US7439770B2Oct 21, 2008

Magnetic tunneling junction based logic circuits and methods of operating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7554774B2Jun 30, 2009

Magnetic resistance device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations83
US7755930B2Jul 13, 2010

Semiconductor memory device and magneto-logic circuit

SAMSUNG ELECTRONICS CO LTD7 citations74
US6894920B2May 17, 2005

Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM

SAMSUNG ELECTRONICS CO LTD9 citations74
US9570674B2Feb 14, 2017

Magnetic device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9230623B2Jan 5, 2016

Magnetic memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US9837468B2Dec 5, 2017

Magnetoresistive random access memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations72
US7928524B2Apr 19, 2011

Magnetoresistive element

SAMSUNG ELECTRONICS CO LTD5 citations63
US7548449B2Jun 16, 2009

Magnetic memory device and methods thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US10249817B2Apr 2, 2019

Magnetic device

SAMSUNG ELECTRONICS CO LTD0 citations52
US8836057B2Sep 16, 2014

Magnetoresistive elements having protrusion from free layer and memory devices including the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7672154B2Mar 2, 2010

Semiconductor memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10096650B2Oct 9, 2018

Method of manufacturing magnetoresistive random access memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10854677B2Dec 1, 2020

Image sensor

SAMSUNG ELECTRONICS CO LTD0 citations50

LEE SUNG-CHUL

5 patents

KIM KWANG-SEOK

4 patents

PI UNG-HWAN

4 patents

KIM KEE-WON

2 patents

HWANG IN-JUN

2 patents

IL DONG PHARMA

2 patents

KIM KI-WOONG

1 patent

KIM HO-JUNG

1 patent

PI UNG HWAN

1 patent