Inventor

PI UNG-HWAN

KR57 patents

⚠️ This page may combine multiple inventors who share the name “PI UNG-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PI UNG-HWAN

SAMSUNG ELECTRONICS CO LTD

Magnetic tunnel junction including a free layer structure and magnetic memory device comprising the same

Thermally stable magnetic tunnel junction cell and memory device including the same

Information storage devices and methods of operating the same

Magnetic tunnel junction and magnetic memory device comprising the same

Magnetic memory devices including magnetic tunnel junctions

Magnetic memory device, method for manufacturing the same, and substrate treating apparatus

Magnetic memory devices and methods of operating the same

Magnetic memory device and method for manufacturing the same

Magnetic memory devices having multiple magnetic layers therein

Magnetic memory devices having a first magnetic pattern and multiple second magnetic patterns thereon

Magnetic memory devices having a first magnetic pattern and multiple second magnetic patterns thereon

Magnetic memory device and method for manufacturing the same

Magnetic memory devices having multiple magnetic layers therein

Semiconductor memory device with spin-orbit coupling channel

Semiconductor memory device with spin-orbit coupling channel

Magnetic property measuring systems, methods for measuring magnetic properties, and methods for manufacturing magnetic memory devices using the same

Magnetic memory devices including magnetic tunnel junctions

Magnetic memory device including a free layer and a pinned layer

Semiconductor device including spin-orbit torque line and method of operating the same

Magnetic memory devices

Magnetoresistive random access memory device and method of manufacturing the same

Semiconductor device including spin-orbit torque line and method of operating the same

Method of manufacuring a magnetic memory device

Magnetic memory device

Magnetic memory devices

Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same

Magnetic memory device

Magnetic memory device

Magnetic memory devices

Magnetoresistive elements having protrusion from free layer and memory devices including the same

LEE SUNG-CHUL

Oscillators and methods of manufacturing and operating the same

Oscillators and methods of manufacturing and operating the same

Tracks including magnetic layer and magnetic memory devices comprising the same

Semiconductor device using magnetic domain wall movement

Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same

Information storage device and method of operating the same

Magnetic memory devices

Magnetoresistive elements and memory devices including the same

Oscillators and methods of operating the same

PI UNG-HWAN

Magnetic memory device

Magnetic memory devices and methods of writing data to the same

Memory device using spin hall effect and methods of manufacturing and operating the memory device

Oscillators and method of operating the same

Information storage devices using magnetic domain wall movement and methods of operating the same

KOREA ELECTRONICS TELECOMM

Tri-gated molecular field effect transistor and method of fabricating the same

Method for manufacturing nano-gap electrode device

Method of manufacturing nano size-gap electrode device

Method for manufacturing nano-gap electrode device

KIM KWANG-SEOK

Oscillators and methods of operating the same

Storage nodes, magnetic memory devices, and methods of manufacturing the same