Inventor
MAO DAXIN
US21 patents
⚠️ This page may combine multiple inventors who share the name “MAO DAXIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
9 patentsUS10008570B2Jun 26, 2018
Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device
SANDISK TECHNOLOGIES LLC62 citations97
US10269620B2Apr 23, 2019
Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
SANDISK TECHNOLOGIES LLC34 citations94
US10256248B2Apr 9, 2019
Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof
SANDISK TECHNOLOGIES LLC42 citations94
US10249640B2Apr 2, 2019
Within-array through-memory-level via structures and method of making thereof
SANDISK TECHNOLOGIES LLC52 citations94
US10056399B2Aug 21, 2018
Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same
SANDISK TECHNOLOGIES LLC24 citations94
US10217746B1Feb 26, 2019
Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same
SANDISK TECHNOLOGIES LLC32 citations93
US9985046B2May 29, 2018
Method of forming a staircase in a semiconductor device using a linear alignment control feature
SANDISK TECHNOLOGIES LLC17 citations86
US10354956B1Jul 16, 2019
Three-dimensional memory device containing hydrogen diffusion barrier structures for CMOS under array architecture and method of making the same
SANDISK TECHNOLOGIES LLC13 citations84
US9859363B2Jan 2, 2018
Self-aligned isolation dielectric structures for a three-dimensional memory device
SANDISK TECHNOLOGIES LLC15 citations82
SANDISK TECHNOLOGIES INC
8 patentsUS9673213B1Jun 6, 2017
Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof
SANDISK TECHNOLOGIES INC77 citations98
US9449987B1Sep 20, 2016
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
SANDISK TECHNOLOGIES INC454 citations98
US9728551B1Aug 8, 2017
Multi-tier replacement memory stack structure integration scheme
SANDISK TECHNOLOGIES INC78 citations97
US9543318B1Jan 10, 2017
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
SANDISK TECHNOLOGIES INC80 citations97
US9853043B2Dec 26, 2017
Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material
SANDISK TECHNOLOGIES INC49 citations94
US9679906B2Jun 13, 2017
Three-dimensional memory devices containing memory block bridges
SANDISK TECHNOLOGIES INC35 citations94
US10115732B2Oct 30, 2018
Three dimensional memory device containing discrete silicon nitride charge storage regions
SANDISK TECHNOLOGIES INC33 citations93
US9716101B2Jul 25, 2017
Forming 3D memory cells after word line replacement
SANDISK TECHNOLOGIES INC8 citations84
APPLIED MATERIALS INC
3 patentsUS7582564B2Sep 1, 2009
Process and composition for conductive material removal by electrochemical mechanical polishing
APPLIED MATERIALS INC9 citations83
US7210988B2May 1, 2007
Method and apparatus for reduced wear polishing pad conditioning
APPLIED MATERIALS INC9 citations72
US7879255B2Feb 1, 2011
Method and composition for electrochemically polishing a conductive material on a substrate
APPLIED MATERIALS INC1 citations50