Inventor
LIM JUNG-HUN
KR43 patents
⚠️ This page may combine multiple inventors who share the name “LIM JUNG-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SOULBRAIN CO LTD
24 patentsUS10465112B2Nov 5, 2019
Composition for etching
SOULBRAIN CO LTD13 citations92
US9868902B2Jan 16, 2018
Composition for etching
SOULBRAIN CO LTD14 citations92
US11390807B2Jul 19, 2022
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD1 citations73
US11149200B2Oct 19, 2021
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD2 citations73
US12163058B2Dec 10, 2024
Semiconductor element
SOULBRAIN CO LTD0 citations62
US12146076B2Nov 19, 2024
Semiconductor element
SOULBRAIN CO LTD0 citations62
US12012525B2Jun 18, 2024
Composition for etching and manufacturing method of semiconductor device using the same
SOULBRAIN CO LTD0 citations62
US11912902B2Feb 27, 2024
Composition for etching and manufacturing method of semiconductor device using the same
SOULBRAIN CO LTD0 citations62
US11634632B2Apr 25, 2023
Composition for etching
SOULBRAIN CO LTD0 citations62
US11634634B2Apr 25, 2023
Composition for etching
SOULBRAIN CO LTD0 citations62
US11634633B2Apr 25, 2023
Composition for etching
SOULBRAIN CO LTD0 citations62
US11566178B2Jan 31, 2023
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD0 citations62
US11530355B2Dec 20, 2022
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD0 citations62
US11512226B2Nov 29, 2022
Composition for etching and manufacturing method of semiconductor device using the same
SOULBRAIN CO LTD0 citations62
US11499073B2Nov 15, 2022
Composition for etching and manufacturing method of semiconductor device using the same
SOULBRAIN CO LTD0 citations62
US11479720B2Oct 25, 2022
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD0 citations62
US11466208B2Oct 11, 2022
Composition for etching
SOULBRAIN CO LTD0 citations62
US11466207B2Oct 11, 2022
Composition for etching
SOULBRAIN CO LTD0 citations62
US11421156B2Aug 23, 2022
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD0 citations62
US11414569B2Aug 16, 2022
Composition for etching and manufacturing method of semiconductor device using the same
SOULBRAIN CO LTD0 citations62
US11390806B2Jul 19, 2022
Composition for etching and method for manufacturing semiconductor device using same
SOULBRAIN CO LTD0 citations62
US11370968B2Jun 28, 2022
Composition for etching
SOULBRAIN CO LTD0 citations62
US11365352B2Jun 21, 2022
Composition for etching
SOULBRAIN CO LTD0 citations62
US11008513B2May 18, 2021
Composition for etching
SOULBRAIN CO LTD0 citations62
SAMSUNG ELECTRONICS CO LTD
16 patentsUS9530670B2Dec 27, 2016
Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant
SAMSUNG ELECTRONICS CO LTD8 citations81
US10377948B2Aug 13, 2019
Etching composition and method for fabricating semiconductor device by using the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11380537B2Jul 5, 2022
Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer
SAMSUNG ELECTRONICS CO LTD2 citations72
US10793775B2Oct 6, 2020
Etching composition and method for fabricating semiconductor device by using the same
SAMSUNG ELECTRONICS CO LTD1 citations72
US10414978B2Sep 17, 2019
Etching composition and method for fabricating semiconductor device by using the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11028488B2Jun 8, 2021
Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11142694B2Oct 12, 2021
Etchant composition and method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations70
US11390805B2Jul 19, 2022
Etching composition and method for manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD3 citations68
US11198815B2Dec 14, 2021
Etching composition and method for fabricating semiconductor device by using the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11795550B2Oct 24, 2023
Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US10995269B2May 4, 2021
Etchant composition and method of fabricating integrated circuit device using the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US7851372B2Dec 14, 2010
Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US12590249B2Mar 31, 2026
Etchant composition
SAMSUNG ELECTRONICS CO LTD0 citations60
US12543337B2Feb 3, 2026
Oxide film coating solution and semiconductor device manufacturing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US10800972B2Oct 13, 2020
Etching composition and method for fabricating semiconductor device by using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10332740B2Jun 25, 2019
Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer
SAMSUNG ELECTRONICS CO LTD0 citations51