Inventor
Lin en-ping
TW22 patents
⚠️ This page may combine multiple inventors who share the name “Lin en-ping”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LARGAN MEDICAL CO LTD
14 patentsUS10416476B2Sep 17, 2019
Contact lens product
LARGAN MEDICAL CO LTD11 citations83
US10768445B2Sep 8, 2020
Contact lens product
LARGAN MEDICAL CO LTD2 citations72
US11300812B2Apr 12, 2022
Contact lens and product thereof
LARGAN MEDICAL CO LTD2 citations71
US12298602B2May 13, 2025
Multifocal contact lens and contact lens product
LARGAN MEDICAL CO LTD0 citations61
US11867985B2Jan 9, 2024
Contact lens and product thereof
LARGAN MEDICAL CO LTD0 citations61
US11782294B2Oct 10, 2023
Multifocal contact lens and contact lens product
LARGAN MEDICAL CO LTD0 citations61
US11467425B2Oct 11, 2022
Contact lens product
LARGAN MEDICAL CO LTD0 citations61
US11372267B2Jun 28, 2022
Contact lens product
LARGAN MEDICAL CO LTD0 citations61
US10845622B2Nov 24, 2020
Multifocal contact lens and contact lens product
LARGAN MEDICAL CO LTD0 citations51
US10698232B2Jun 30, 2020
Contact lens and product thereof
LARGAN MEDICAL CO LTD0 citations51
US10578889B2Mar 3, 2020
Contact lens product
LARGAN MEDICAL CO LTD0 citations51
US10371966B2Aug 6, 2019
Contact lens product
LARGAN MEDICAL CO LTD0 citations51
US10698233B2Jun 30, 2020
Contact lens
LARGAN MEDICAL CO LTD0 citations40
US10371964B2Aug 6, 2019
Contact lens product
LARGAN MEDICAL CO LTD0 citations40
TAIWAN SEMICONDUCTOR MFG CO LTD
6 patentsUS12563828B2Feb 24, 2026
Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12356710B2Jul 8, 2025
Fin height and STI depth for performance improvement in semiconductor devices having high-mobility p-channel transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11120986B2Sep 14, 2021
Etching using chamber with top plate formed of non-oxygen containing material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10504720B2Dec 10, 2019
Etching using chamber with top plate formed of non-oxygen containing material
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations59
US12165873B2Dec 10, 2024
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11328931B1May 10, 2022
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56