Inventor
HALIMAOUI AOMAR
FR22 patents
⚠️ This page may combine multiple inventors who share the name “HALIMAOUI AOMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
6 patentsUS9704709B2Jul 11, 2017
Method for causing tensile strain in a semiconductor film
COMMISSARIAT ENERGIE ATOMIQUE2 citations72
US11276652B2Mar 15, 2022
Method for securing an integrated circuit upon making it
COMMISSARIAT ENERGIE ATOMIQUE2 citations69
US10319806B2Jun 11, 2019
Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor
COMMISSARIAT ENERGIE ATOMIQUE5 citations65
US11749807B2Sep 5, 2023
Electrically conductive element
COMMISSARIAT ENERGIE ATOMIQUE0 citations55
US10651376B2May 12, 2020
Method of manufacturing a memory device
COMMISSARIAT ENERGIE ATOMIQUE0 citations48
US7635615B2Dec 22, 2009
Manufacturing processing for an isolated transistor with strained channel
COMMISSARIAT ENERGIE ATOMIQUE0 citations46
ST MICROELECTRONICS SA
4 patentsUS6287936B1Sep 11, 2001
Method of forming porous silicon in a silicon substrate, in particular for improving the performance of an inductive circuit
ST MICROELECTRONICS SA12 citations70
US6969661B2Nov 29, 2005
Method for forming a localized region of a material difficult to etch
ST MICROELECTRONICS SA2 citations62
US7638844B2Dec 29, 2009
Manufacturing method of semiconductor-on-insulator region structures
ST MICROELECTRONICS SA1 citations52
US7279404B2Oct 9, 2007
Process for fabricating strained layers of silicon or of a silicon/germanium alloy
ST MICROELECTRONICS SA1 citations51
HALIMAOUI AOMAR
4 patentsUS8178426B2May 15, 2012
Method for manufacturing a structure of semiconductor-on-insulator type
HALIMAOUI AOMAR2 citations59
US8536027B2Sep 17, 2013
Method for making a semi-conducting substrate located on an insulation layer
HALIMAOUI AOMAR0 citations50
US9330957B2May 3, 2016
Process for assembling two wafers and corresponding device
HALIMAOUI AOMAR0 citations49
US8975682B2Mar 10, 2015
Integrated circuit comprising a capacitor with HSG metal electrodes
HALIMAOUI AOMAR0 citations44