Inventor

KIM KI HEUNG

KR14 patents

⚠️ This page may combine multiple inventors who share the name “KIM KI HEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

11 patents

US11194505B2Dec 7, 2021

High bandwidth memory device and system device having the same

SAMSUNG ELECTRONICS CO LTD6 citations82

US11049584B2Jun 29, 2021

Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same

SAMSUNG ELECTRONICS CO LTD2 citations72

US10996885B2May 4, 2021

High bandwidth memory device and system device having the same

SAMSUNG ELECTRONICS CO LTD3 citations71

US11921579B2Mar 5, 2024

Method of operating memory device, method of operating memory controller and memory system

SAMSUNG ELECTRONICS CO LTD0 citations62

US12423182B2Sep 23, 2025

Memory module including memory devices to which unit ID is assigned and storage device including the same

SAMSUNG ELECTRONICS CO LTD0 citations57

US12474871B2Nov 18, 2025

Memory module for performing one-time programmable (OTP) addressing operation to store unique ID of each memory device in an ID storge region of each memory device, and storage device including the same

SAMSUNG ELECTRONICS CO LTD0 citations57

US8902686B2Dec 2, 2014

Memory device, operation method thereof, and memory system having the same

SAMSUNG ELECTRONICS CO LTD1 citations51

US8837246B2Sep 16, 2014

Memory device, operation method thereof and memory system having the same

SAMSUNG ELECTRONICS CO LTD0 citations51

KIM KI-HEUNG

3 patents

US8416632B2Apr 9, 2013

Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage

KIM KI-HEUNG7 citations81

US8483001B2Jul 9, 2013

Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator

KIM KI-HEUNG2 citations60

US8284624B2Oct 9, 2012

Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator

KIM KI-HEUNG2 citations60

KIM KI HEUNG

SAMSUNG ELECTRONICS CO LTD

High bandwidth memory device and system device having the same

Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same

High bandwidth memory device and system device having the same

Method of operating memory device, method of operating memory controller and memory system

Memory device and operation method thereof

High bandwidth memory device and system device having the same

High bandwidth memory device and system device having the same

Memory module including memory devices to which unit ID is assigned and storage device including the same

Memory module for performing one-time programmable (OTP) addressing operation to store unique ID of each memory device in an ID storge region of each memory device, and storage device including the same

Memory device, operation method thereof, and memory system having the same

Memory device, operation method thereof and memory system having the same

KIM KI-HEUNG

Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage

Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator

Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator