Inventor
SUN JONATHAN Z
US31 patents
⚠️ This page may combine multiple inventors who share the name “SUN JONATHAN Z”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
20 patentsUS6515957B1Feb 4, 2003
Ferroelectric drive for data storage
IBM163 citations99
US9269415B1Feb 23, 2016
Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applications
IBM19 citations92
US7525862B1Apr 28, 2009
Methods involving resetting spin-torque magnetic random access memory with domain wall
IBM48 citations92
US7488967B2Feb 10, 2009
Structure for confining the switching current in phase memory (PCM) cells
IBM40 citations92
US7505308B1Mar 17, 2009
Systems involving spin-transfer magnetic random access memory
IBM11 citations84
US7492631B1Feb 17, 2009
Methods involving resetting spin-torque magnetic random access memory
IBM13 citations84
US10553781B2Feb 4, 2020
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
IBM1 citations73
US10229722B2Mar 12, 2019
Three terminal spin hall MRAM
IBM3 citations73
US10109336B1Oct 23, 2018
Domain wall control in ferroelectric devices
IBM4 citations73
US9647204B2May 9, 2017
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer
IBM3 citations73
US9355700B2May 31, 2016
Read circuit for memory
IBM3 citations73
US10078496B2Sep 18, 2018
Magnetic tunnel junction (MTJ) based true random number generators (TRNG)
IBM4 citations72
US11527707B2Dec 13, 2022
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
IBM0 citations62
US11164615B2Nov 2, 2021
Spin hall write select for magneto-resistive random access memory
IBM0 citations62
US11289644B2Mar 29, 2022
Magnetic tunnel junction having all-around structure
IBM1 citations61
US10374145B2Aug 6, 2019
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
IBM0 citations52
US9947383B1Apr 17, 2018
Spin hall write select for magneto-resistive random access memory
IBM0 citations52
US9715917B2Jul 25, 2017
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer
IBM0 citations52
US9105342B2Aug 11, 2015
Read circuit for memory
IBM0 citations52
US11487508B2Nov 1, 2022
Magnetic tunnel junction based true random number generator
IBM0 citations50
SUPERCONDUCTOR TECH
4 patentsUS7190165B2Mar 13, 2007
Tunable superconducting resonator and methods of tuning thereof
SUPERCONDUCTOR TECH12 citations91
US6727702B2Apr 27, 2004
Tunable superconducting resonator and methods of tuning thereof
SUPERCONDUCTOR TECH19 citations91
US5328893AJul 12, 1994
Superconducting devices having a variable conductivity device for introducing energy loss
SUPERCONDUCTOR TECH18 citations72
US8030925B2Oct 4, 2011
Tunable superconducting resonator and methods of tuning thereof
SUPERCONDUCTOR TECH1 citations61
HU GUOHAN
2 patentsGAIDIS MICHAEL C
2 patentsUS8270208B2Sep 18, 2012
Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor
GAIDIS MICHAEL C4 citations62
US8927301B2Jan 6, 2015
Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor
GAIDIS MICHAEL C0 citations52