Inventor
PREISLER EDWARD J
US13 patents
Patents
13 patentsUS10319716B2Jun 11, 2019
Substrate isolation for low-loss radio frequency (RF) circuits
NEWPORT FAB LLC5 citations82
US10068997B1Sep 4, 2018
SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
NEWPORT FAB LLC12 citations82
US10469035B2Nov 5, 2019
Amplifier using parallel high-speed and low-speed transistors
NEWPORT FAB LLC3 citations72
US10290631B2May 14, 2019
Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon region
NEWPORT FAB LLC2 citations71
US10991631B2Apr 27, 2021
High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications
NEWPORT FAB LLC1 citations62
US10177045B2Jan 8, 2019
Bulk CMOS RF switch with reduced parasitic capacitance
NEWPORT FAB LLC1 citations62
US10325907B2Jun 18, 2019
Substrate isolation for low-loss radio frequency (RF) circuits
NEWPORT FAB LLC1 citations60
US10622262B2Apr 14, 2020
High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applications
NEWPORT FAB LLC0 citations52
US10177044B2Jan 8, 2019
Bulk CMOS RF switch with reduced parasitic capacitance
NEWPORT FAB LLC0 citations51
US10529836B1Jan 7, 2020
SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
NEWPORT FAB LLC0 citations50
US10347625B2Jul 9, 2019
Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon region
NEWPORT FAB LLC0 citations50
US11830961B2Nov 28, 2023
Silicon nitride hard mask for epitaxial germanium on silicon
NEWPORT FAB LLC0 citations49
US10797132B2Oct 6, 2020
Heterojunction bipolar transistor fabrication using resist mask edge effects
NEWPORT FAB LLC0 citations41