Inventor
LIN KAO-CHENG
TW50 patents
⚠️ This page may combine multiple inventors who share the name “LIN KAO-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
44 patentsUS10650882B2May 12, 2020
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US9129707B2Sep 8, 2015
Dual port SRAM with dummy read recovery
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US9524920B2Dec 20, 2016
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9412742B2Aug 9, 2016
Layout design for manufacturing a memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10783954B2Sep 22, 2020
Semiconductor memory with respective power voltages for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10651114B2May 12, 2020
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10163759B2Dec 25, 2018
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9685224B2Jun 20, 2017
Memory with bit line control
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9275710B2Mar 1, 2016
Three dimensional cross-access dual-port bit cell design
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11734142B2Aug 22, 2023
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11256588B2Feb 22, 2022
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11100964B1Aug 24, 2021
Multi-stage bit line pre-charge
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12205634B2Jan 21, 2025
Electronic circuits, memory devices, and methods for operating an electronic circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12300605B2May 13, 2025
Reducing internal node loading in combination circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12176026B2Dec 24, 2024
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854970B2Dec 26, 2023
Reducing internal node loading in combination circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11676660B2Jun 13, 2023
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11450605B2Sep 20, 2022
Reducing internal node loading in combination circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11264088B2Mar 1, 2022
Semiconductor memory with respective power voltages for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11205475B2Dec 21, 2021
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9418729B2Aug 16, 2016
Multi-port memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12562197B2Feb 24, 2026
Header circuit placement in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12548619B2Feb 10, 2026
Device and circuit with voltage suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183417B2Dec 31, 2024
Memory device and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923034B2Mar 5, 2024
Header circuit placement in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538507B1Dec 27, 2022
Header circuit placement in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9466493B2Oct 11, 2016
Sense amplifier layout for FinFET technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12581635B2Mar 17, 2026
Integrated circuit device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12512131B2Dec 30, 2025
Memory device, method, layout, and system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12436858B2Oct 7, 2025
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12406704B2Sep 2, 2025
Multi-stage bit line pre-charge
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11749321B2Sep 5, 2023
Multi-stage bit line pre-charge
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10705934B2Jul 7, 2020
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11238905B2Feb 1, 2022
Sense amplifier layout for FinFET technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10032490B2Jul 24, 2018
Sense amplifier layout for FinFET technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US12446216B2Oct 14, 2025
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11961554B2Apr 16, 2024
Shared power footer circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9997436B2Jun 12, 2018
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9997235B2Jun 12, 2018
Semiconductor memory with respective power voltages for plurality of memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9640251B2May 2, 2017
Multi-port memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12382725B2Aug 5, 2025
Variable-sized active regions for a semiconductor device and methods of making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12334178B2Jun 17, 2025
Integrated circuit, system and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10636458B2Apr 28, 2020
Sense amplifier layout for FinFET technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9799394B2Oct 24, 2017
Static random access memory (SRAM) with recovery circuit for a write operation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42