Inventor

DERHACOBIAN NARBEH

US57 patents

⚠️ This page may combine multiple inventors who share the name “DERHACOBIAN NARBEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DERHACOBIAN NARBEH

ADVANCED MICRO DEVICES INC

Method of programming a non-volatile memory cell using a current limiter

Method of maintaining constant erasing speeds for non-volatile memory cells

Method for reducing program disturb during self-boosting in a NAND flash memory

Method of programming a non-volatile memory cell using a baking process

Higher program VT and faster programming rates based on improved erase methods

Planar structure for non-volatile memory devices

Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure

Method of simultaneous formation of bitline isolation and periphery oxide

Tailored erase method using higher program VT and higher negative gate erase

NAND array structure and method with buried layer

Simultaneous formation of charge storage and bitline to wordline isolation

Simultaneous formation of charge storage and bitline to wordline isolation

Method of programming a non-volatile memory cell using a substrate bias

Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure

Negative gate erase

Charge injection

Nonlinear stepped programming voltage

Method of manufacturing high voltage transistor with modified field implant mask

Single bit array edges

Higher program VT and faster programming rates based on improved erase methods

Low voltage junction and high voltage junction optimization for flash memory

Nonvolatile memory cell with a nitridated oxide layer

Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory

Positive gate erasure for non-volatile memory cells

Intelligent ramped gate and ramped drain erasure for non-volatile memory cells

Symmetrical program and erase scheme to improve erase time degradation in NAND devices

High voltage NMOS pass gate having supply range, area, and speed advantages

Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation

Core field isolation for a NAND flash memory

Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories

High voltage NMOS pass gate having supply range, area, and speed advantages

High voltage transistor with high gated diode breakdown, low body effect and low leakage

Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure

Multi state sensing of NAND memory cells by applying reverse-bias voltage

Using a negative gate erase voltage applied in steps of decreasing amounts to reduce erase time for a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure

Multi state sensing of NAND memory cells by varying source bias

DERHACOBIAN NARBEH

Reconfigurable memory arrays having programmable impedance elements and corresponding methods

Circuits having programmable impedance elements

Programmable impedance element circuits and methods

PMC-based non-volatile CAM

Circuits and methods having programmable impedance elements

Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements

ADESTO TECHNOLOGIES CORP

Application of relaxation voltage pulses to programmble impedance elements during read operations

Integrated circuit devices and systems having programmable impedance elements with different response types

PMC-based non-volatile CAM

VIRAGE LOGIC CORP

Electrically-alterable non-volatile memory cell

Electrically-alterable non-volatile memory cell

KORDUS II LOUIS CHARLES

Multi-terminal phase change devices

GILBERT NAD EDWARD

Read operations and circuits for memory devices having programmable elements, including programmable resistance elements

ADVANCED MICTRO DEVICES INC

High voltage transistor with high gated diode breakdown voltage