P

Inventor

BAE DONG-JOO

KR12 patents
⚠️ This page may combine multiple inventors who share the name “BAE DONG-JOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

7 patents
US5256585AOct 26, 1993

Process for fabricating a gate-drain overlapped semiconductor

SAMSUNG ELECTRONICS CO LTD38 citations92
US5135883AAug 4, 1992

Process for producing a stacked capacitor of a dram cell

SAMSUNG ELECTRONICS CO LTD64 citations91
US5095346AMar 10, 1992

Stacked-capacitor for a dram cell

SAMSUNG ELECTRONICS CO LTD26 citations91
US5320980AJun 14, 1994

Interconnection structure in semiconductor device and the method thereof

SAMSUNG ELECTRONICS CO LTD6 citations73
US5236859AAug 17, 1993

Method of making stacked-capacitor for a dram cell same

SAMSUNG ELECTRONICS CO LTD14 citations72
US5187548AFeb 16, 1993

Stacked capacitor of a dram cell with fin-shaped electrodes having supporting layers

SAMSUNG ELECTRONICS CO LTD18 citations72
US4965214AOct 23, 1990

Method for manufacturing poly-crystal sillicon having high resistance

SAMSUNG ELECTRONICS CO LTD17 citations68

TEXAS INSTRUMENTS INC

2 patents
US8962419B2Feb 24, 2015

Complementary stress memorization technique layer method

TEXAS INSTRUMENTS INC2 citations61
US7927987B2Apr 19, 2011

Method of reducing channeling of ion implants using a sacrificial scattering layer

TEXAS INSTRUMENTS INC0 citations50

ANAM SEMICONDUCTOR INC

1 patent
US6426277B1Jul 30, 2002

Methods and a device for heat treating a semiconductor wafer having different kinds of impurities

ANAM SEMICONDUCTOR INC19 citations86

MCMULLAN RUSSELL CARLTON

1 patent
US8871587B2Oct 28, 2014

Complementary stress memorization technique layer method

MCMULLAN RUSSELL CARLTON6 citations80

SAMSUNG ELECTRONICW CO LTD

1 patent
US5285110AFeb 8, 1994

Interconnection structure in semiconductor device

SAMSUNG ELECTRONICW CO LTD5 citations57