P

Inventor

MURAKOSHI ATSUSHI

JP40 patents
⚠️ This page may combine multiple inventors who share the name “MURAKOSHI ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

26 patents
US6376888B1Apr 23, 2002

Semiconductor device and method of manufacturing the same

TOSHIBA KK175 citations99
US6465290B1Oct 15, 2002

Method of manufacturing a semiconductor device using a polymer film pattern

TOSHIBA KK88 citations98
US6335534B1Jan 1, 2002

Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes

TOSHIBA KK81 citations98
US5698869ADec 16, 1997

Insulated-gate transistor having narrow-bandgap-source

TOSHIBA KK415 citations98
US6939787B2Sep 6, 2005

Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film

TOSHIBA KK97 citations97
US6614033B2Sep 2, 2003

Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes

TOSHIBA KK71 citations96
US6403452B1Jun 11, 2002

Ion implantation method and ion implantation equipment

TOSHIBA KK19 citations93
US5640020AJun 17, 1997

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

TOSHIBA KK25 citations92
US9431412B1Aug 30, 2016

Semiconductor memory device and method for manufacturing the same

TOSHIBA KK14 citations84
US9129995B2Sep 8, 2015

Semiconductor memory device and method for manufacturing the same

TOSHIBA KK9 citations84
US7772641B2Aug 10, 2010

Power semiconductor device with a plurality of gate electrodes

TOSHIBA KK15 citations82
US5656820AAug 12, 1997

Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device

TOSHIBA KK17 citations82
US5598025AJan 28, 1997

Semiconductor device comprises an impurity layer having boron ions in the form of clusters of icosahedron structure

TOSHIBA KK17 citations81
US6693023B2Feb 17, 2004

Ion implantation method and ion implantation equipment

TOSHIBA KK8 citations74
US6646268B2Nov 11, 2003

Ion generation method and filament for ion generation apparatus

TOSHIBA KK10 citations74
US5770512AJun 23, 1998

Semiconductor device

TOSHIBA KK11 citations71
US5656859AAug 12, 1997

Semiconductor device

TOSHIBA KK7 citations71
US7928483B2Apr 19, 2011

Semiconductor device and method for manufacturing same

TOSHIBA KK4 citations63
US6875986B1Apr 5, 2005

Ion generation method and filament for ion generation apparatus

TOSHIBA KK3 citations63
US5413943AMay 9, 1995

Semiconductor device and method of manufacturing the same

TOSHIBA KK3 citations62
US7977141B2Jul 12, 2011

Solid-state image pickup device and method of manufacturing the same

TOSHIBA KK4 citations60
US9735167B2Aug 15, 2017

Semiconductor memory device and method for manufacturing the same

TOSHIBA KK0 citations52
US9082703B2Jul 14, 2015

Nonvolatile semiconductor memory device, method for manufacturing same, and manufacturing apparatus

TOSHIBA KK0 citations52
US9064902B2Jun 23, 2015

Semiconductor memory device and method for manufacturing same

TOSHIBA KK0 citations52
US7145658B2Dec 5, 2006

Apparatus and method for evaluating semiconductor material

TOSHIBA KK1 citations46
US9741730B2Aug 22, 2017

Semiconductor device and method for manufacturing the same

TOSHIBA KK0 citations39

TOSHIBA MEMORY CORP

8 patents

MURAKOSHI ATSUSHI

4 patents

TOKYO SHIBAURA ELECTRIC CO

1 patent

KIOXIA CORP

1 patent