P

Inventor

KUROIWA TAKEHARU

JP39 patents
⚠️ This page may combine multiple inventors who share the name “KUROIWA TAKEHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

21 patents
US5442213AAug 15, 1995

Semiconductor device with high dielectric capacitor having sidewall spacers

MITSUBISHI ELECTRIC CORP82 citations96
US5418388AMay 23, 1995

Semiconductor device having a capacitor with an adhesion layer

MITSUBISHI ELECTRIC CORP72 citations96
US7375516B2May 20, 2008

Magnetic field detector, current detector, position detector and rotation detector employing it

MITSUBISHI ELECTRIC CORP22 citations92
US6344991B1Feb 5, 2002

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP38 citations92
US6239460B1May 29, 2001

Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium

MITSUBISHI ELECTRIC CORP36 citations92
US6049103AApr 11, 2000

Semiconductor capacitor

MITSUBISHI ELECTRIC CORP30 citations92
US5668041ASep 16, 1997

Method of manufacturing a semiconductor device having a capacitor

MITSUBISHI ELECTRIC CORP18 citations92
US5534458AJul 9, 1996

Method of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacers

MITSUBISHI ELECTRIC CORP27 citations92
US6015989AJan 18, 2000

Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen

MITSUBISHI ELECTRIC CORP53 citations90
US5372850ADec 13, 1994

Method of manufacturing an oxide-system dielectric thin film using CVD method

MITSUBISHI ELECTRIC CORP39 citations89
US6187622B1Feb 13, 2001

Semiconductor memory device and method for producing the same

MITSUBISHI ELECTRIC CORP19 citations84
US8378674B2Feb 19, 2013

Magnetic field detection device

MITSUBISHI ELECTRIC CORP18 citations83
US7786725B2Aug 31, 2010

Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the same

MITSUBISHI ELECTRIC CORP9 citations83
US5652186AJul 29, 1997

Semiconductor device and a method of manufacturing thereof

MITSUBISHI ELECTRIC CORP4 citations74
US5939744AAug 17, 1999

Semiconductor device with x-ray absorption layer

MITSUBISHI ELECTRIC CORP10 citations73
US9988738B2Jun 5, 2018

Method for manufacturing SiC epitaxial wafer

MITSUBISHI ELECTRIC CORP3 citations71
US7508203B2Mar 24, 2009

Magnetic field detector, and current detection device, position detection device and rotation detection devices using the magnetic field detector

MITSUBISHI ELECTRIC CORP3 citations62
US6420191B2Jul 16, 2002

Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium

MITSUBISHI ELECTRIC CORP2 citations62
US7733210B2Jun 8, 2010

Magnetic field detector and manufacturing method thereof

MITSUBISHI ELECTRIC CORP3 citations60
US11094835B2Aug 17, 2021

Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device

MITSUBISHI ELECTRIC CORP0 citations57
US10199457B2Feb 5, 2019

Silicon carbide semiconductor device

MITSUBISHI ELECTRIC CORP0 citations41

RENESAS ELECTRONICS CORP

7 patents

TAKENAGA TAKASHI

3 patents

RENESAS TECH CORP

2 patents

KUROIWA TAKEHARU

1 patent

FURUKAWA TAISUKE

1 patent

FURUTA HARUO

1 patent

MATSUDA RYOJI

1 patent

TOMITA NOBUYUKI

1 patent

OHTSU YOSHIJI

1 patent