Inventor

JUNG CHULMIN

US96 patents

⚠️ This page may combine multiple inventors who share the name “JUNG CHULMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUNG CHULMIN

QUALCOMM INC

Write data path to reduce charge leakage of negative boost

Write driver for memory

Write driver circuitry to reduce leakage of negative boost charge

Write assist circuitry for memory

SRAM with burst mode address comparator

Pseudo-dual-port SRAM with burst-mode address comparator

Systems and methods for driving wordlines using set-reset latches

High-speed level shifter

High-speed word line decoder and level-shifter

Shared sense amplifier

Apparatus and method for writing data to memory array circuits

Determining a voltage and/or frequency for a performance mode

Read tracking scheme for a memory device

Memory write methods and circuits

Memory with scan chain testing of column redundancy logic and multiplexing

Method of pseudo-triple-port SRAM datapaths

Memory with scan chain testing of column redundancy logic and multiplexing

Memory with efficient DVS controlled by asynchronous inputs

Memory with single-ended sensing using reset-set latch

Pseudo-triple-port SRAM datapaths

SRAM with burst mode operation

Burst-mode memory with column multiplexer

Techniques for reducing rock bottom leakage in memory

MICRON TECHNOLOGY INC

Data path having grounded precharge operation and test compression capability

Array sense amplifiers, memory devices and systems including same, and methods of operation

Input-output line sense amplifier having adjustable output drive capability

Power saving sensing scheme for solid state memory

Apparatus with equalizing voltage generation circuit and methods of use

Line amplifier to supplement line driver in an integrated circuit

Input-output line sense amplifier having adjustable output drive capability

Input-output line sense amplifier having adjustable output drive capability

Input-output line sense amplifier having adjustable output drive capability

Array sense amplifiers, memory devices and systems including same, and methods of operation

Apparatus with equalizing voltage generation circuit and methods of use

SEAGATE TECHNOLOGY LLC

Non-volatile memory cell with complementary resistive memory elements

Non-volatile memory cell with programmable unipolar switching element

Floating source line architecture for non-volatile memory

Polarity dependent switch for resistive sense memory

Polarity dependent switch for resistive sense memory

Floating source line architecture for non-volatile memory

Floating source line architecture for non-volatile memory

Hierarchical cross-point array of non-volatile memory

NAND flash memory with integrated bit line capacitance

Compensating for variations in memory cell programmed state distributions

Magnetic memory with magnetic tunnel junction cell sets

KIM YOUNG PIL

Vertical transistor with hardening implatation

TIAN WEI

Non-volatile memory cell with programmable unipolar switching element

KHOURY MAROUN GEORGES

Vertical non-volatile switch with punchthrough access and method of fabrication therefor

LEE HYUNG-KYU

Patterning embedded control lines for vertically stacked semiconductor elements

SUN MING

Programmable metallization cell switch and memory units containing the same