Inventor
AHN BYUNG JIN
KR20 patents
⚠️ This page may combine multiple inventors who share the name “AHN BYUNG JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYUNDAI ELECTRONICS IND
10 patentsUS5877525AMar 2, 1999
Flash EEPROM cell and method of making the same
HYUNDAI ELECTRONICS IND20 citations92
US5716865AFeb 10, 1998
Method of making split gate flash EEPROM cell by separating the tunneling region from the channel
HYUNDAI ELECTRONICS IND17 citations92
US6407947B2Jun 18, 2002
Method of erasing a flash memory device
HYUNDAI ELECTRONICS IND14 citations83
US6381192B1Apr 30, 2002
Address buffer in a flash memory
HYUNDAI ELECTRONICS IND9 citations74
US6424568B2Jul 23, 2002
Code addressable memory cell in flash memory device
HYUNDAI ELECTRONICS IND6 citations73
US5859453AJan 12, 1999
Flash EEPROM cell and method of making the same
HYUNDAI ELECTRONICS IND9 citations73
US5852312ADec 22, 1998
Flash eeprom cell
HYUNDAI ELECTRONICS IND8 citations73
US5867426AFeb 2, 1999
Method of programming a flash memory cell
HYUNDAI ELECTRONICS IND12 citations63
US6583465B1Jun 24, 2003
Code addressable memory cell in a flash memory device
HYUNDAI ELECTRONICS IND5 citations62
US6465302B1Oct 15, 2002
Method of manufacturing a flash memory device
HYUNDAI ELECTRONICS IND3 citations62
LG ELECTRONICS INC
4 patentsUS7787914B2Aug 31, 2010
Mobile communication terminal having opening mechanism
LG ELECTRONICS INC24 citations91
US8358278B2Jan 22, 2013
Input device, mobile terminal having the same, and user interface thereof
LG ELECTRONICS INC13 citations82
US7428430B2Sep 23, 2008
Open and close apparatus of slide type portable terminal
LG ELECTRONICS INC17 citations77
US7299078B2Nov 20, 2007
Mobile terminal
LG ELECTRONICS INC9 citations73
HYNIX SEMICONDUCTOR INC
2 patentsUS6960805B2Nov 1, 2005
Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell
HYNIX SEMICONDUCTOR INC4 citations62
US6703275B2Mar 9, 2004
Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell
HYNIX SEMICONDUCTOR INC4 citations62