Inventor

JAIN SAMEER H

US17 patents

⚠️ This page may combine multiple inventors who share the name “JAIN SAMEER H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JAIN SAMEER H

IBM

Selective dielectric spacer deposition for exposing sidewalls of a finFET

Fin end spacer for preventing merger of raised active regions

Two-step silicide formation

Formation of functional gate structures with different critical dimensions using a replacement gate process

Scalable strained FET device and method of fabricating the same

Third type of metal gate stack for CMOS devices

Two-step silicide formation

Selective dielectric spacer deposition for exposing sidewalls of a finFET

Third type of metal gate stack for CMOS devices

Fin end spacer for preventing merger of raised active regions

Third type of metal gate stack for CMOS devices

Fin end spacer for preventing merger of raised active regions

Fin end spacer for preventing merger of raised active regions

Fin end spacer for preventing merger of raised active regions

Unidirectional spacer in trench silicide

JAIN SAMEER H

Replacement gate MOSFET with self-aligned diffusion contact

Replacement metal gate structure and methods of manufacture