Inventor · disambiguated record
Jong-Yeol Park
Also filed as: PARK JONG-YEOL
9 granted patents·2 pending applications·108 citations·filing 2003–2024
88Inventor score
Top patents by PatentIndex Score
11 records- 0191US7412575B2Data management technique for improving data reliabilitySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 12, 2008·28 cites·23 claims
- 0288US7800950B2Memory devices and methods using selective self-boost programming operationsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·21 cites·25 claims
- 0382US9030869B2Three dimensional semiconductor memory deviceYUN JUNG-YUN·Filed 2012·Granted May 12, 2015·11 cites·19 claims
- 0478US7663922B2Non-volatile semiconductor memory devices with lower and upper bit lines sharing a voltage control block, and memory cards and systems having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 16, 2010·12 cites·14 claims
- 0575US7555629B2Memory card providing hardware acceleration for read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 30, 2009·3 cites·13 claims
- 0671US8199584B2Nonvolatile memory device for preventing program disturbance and method of programming the nonvolatile memory devicePARK JONG-YEOL·Filed 2011·Granted Jun 12, 2012·5 cites·8 claims
- 0770US6765839B2Refresh circuit having variable restore time according to operating mode of semiconductor memory device and refresh method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 20, 2004·19 cites·16 claims
- 0865US7623383B2Three-level non-volatile semiconductor memory devices with lower and upper bit lines sharing a voltage control blockSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 24, 2009·6 cites·17 claims
- 0959US2024227123A1Multi-nozzle for supplying cmp slurry and cmp equipment including the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1057US7889567B2Nonvolatile memory device for preventing program disturbance and method of programming the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·3 cites·10 claims
- 1138US2010110796A1Method of performing erase operation in non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
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