Inventor
NESBIT LARRY ALAN
US19 patents
Patents
19 patentsUS6713835B1Mar 30, 2004
Method for manufacturing a multi-level interconnect structure
IBM297 citations99
US7691720B2Apr 6, 2010
Vertical nanotube semiconductor device structures and methods of forming the same
IBM22 citations93
US7038299B2May 2, 2006
Selective synthesis of semiconducting carbon nanotubes
IBM40 citations93
US7211844B2May 1, 2007
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
IBM16 citations92
US6890828B2May 10, 2005
Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby
IBM26 citations92
US6084276AJul 4, 2000
Threshold voltage tailoring of corner of MOSFET device
IBM32 citations92
US5994202ANov 30, 1999
Threshold voltage tailoring of the corner of a MOSFET device
IBM24 citations92
US7374793B2May 20, 2008
Methods and structures for promoting stable synthesis of carbon nanotubes
IBM31 citations91
US6989308B2Jan 24, 2006
Method of forming FinFET gates without long etches
IBM24 citations91
US7829883B2Nov 9, 2010
Vertical carbon nanotube field effect transistors and arrays
IBM10 citations84
US7273794B2Sep 25, 2007
Shallow trench isolation fill by liquid phase deposition of SiO2
IBM13 citations84
US7329567B2Feb 12, 2008
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
IBM6 citations74
US7264415B2Sep 4, 2007
Methods of forming alternating phase shift masks having improved phase-shift tolerance
IBM4 citations63
US6245651B1Jun 12, 2001
Method of simultaneously forming a line interconnect and a borderless contact to diffusion
IBM5 citations63
US7820502B2Oct 26, 2010
Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
IBM3 citations60
US7994575B2Aug 9, 2011
Metal-oxide-semiconductor device structures with tailored dopant depth profiles
IBM0 citations52
US7951660B2May 31, 2011
Methods for fabricating a metal-oxide-semiconductor device structure
IBM0 citations52
US7851064B2Dec 14, 2010
Methods and structures for promoting stable synthesis of carbon nanotubes
IBM0 citations52
US7525156B2Apr 28, 2009
Shallow trench isolation fill by liquid phase deposition of SiO2
IBM0 citations52