Inventor
FURUKAWA HIDETOSHI
JP16 patents
⚠️ This page may combine multiple inventors who share the name “FURUKAWA HIDETOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
5 patentsUS6365513B1Apr 2, 2002
Method of making a semiconductor device including testing before thinning the semiconductor substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD36 citations92
US7439621B1Oct 21, 2008
Radio frequency signal processing device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations83
US6201288B1Mar 13, 2001
Regulating resistor network, semiconductor device including the resistor network, and method for fabricating the device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US7408968B2Aug 5, 2008
Semiconductor laser device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations62
US6649463B2Nov 18, 2003
Regulating resistor network, semiconductor device including the resistor network, and method for fabricating the device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
FURUKAWA HIDETOSHI
4 patentsUS9121919B2Sep 1, 2015
Target tracking device and target tracking method
FURUKAWA HIDETOSHI5 citations70
US8963766B2Feb 24, 2015
Target tracking system and method using data of angle sensors
FURUKAWA HIDETOSHI3 citations60
US9128186B2Sep 8, 2015
Target tracking device and target tracking method
FURUKAWA HIDETOSHI1 citations49
US9041593B2May 26, 2015
Target tracking apparatus, storage medium stored a target tracking program, target tracking system, and target tracking method
FURUKAWA HIDETOSHI0 citations39
MATSUSHITA ELECTRONICS CORP
3 patentsUS6245628B1Jun 12, 2001
Method of manufacturing a resistor in a semiconductor device
MATSUSHITA ELECTRONICS CORP8 citations73
US6025632AFeb 15, 2000
Semiconductor integrated circuit with tungston silicide nitride thermal resistor
MATSUSHITA ELECTRONICS CORP4 citations62
US5708292AJan 13, 1998
Power amplification circuit
MATSUSHITA ELECTRONICS CORP3 citations62