Inventor
WALLACE ROBERT M
US51 patents
⚠️ This page may combine multiple inventors who share the name “WALLACE ROBERT M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
40 patentsUS6291866B1Sep 18, 2001
Zirconium and/or hafnium oxynitride gate dielectric
TEXAS INSTRUMENTS INC165 citations99
US6291867B1Sep 18, 2001
Zirconium and/or hafnium silicon-oxynitride gate dielectric
TEXAS INSTRUMENTS INC248 citations99
US6024801AFeb 15, 2000
Method of cleaning and treating a semiconductor device including a micromechanical device
TEXAS INSTRUMENTS INC179 citations99
US6020243AFeb 1, 2000
Zirconium and/or hafnium silicon-oxynitride gate dielectric
TEXAS INSTRUMENTS INC494 citations99
US6013553AJan 11, 2000
Zirconium and/or hafnium oxynitride gate dielectric
TEXAS INSTRUMENTS INC1,068 citations99
US5610438AMar 11, 1997
Micro-mechanical device with non-evaporable getter
TEXAS INSTRUMENTS INC539 citations99
US5606177AFeb 25, 1997
Silicon oxide resonant tunneling diode structure
TEXAS INSTRUMENTS INC248 citations99
US5523878AJun 4, 1996
Self-assembled monolayer coating for micro-mechanical devices
TEXAS INSTRUMENTS INC195 citations99
US5512374AApr 30, 1996
PFPE coatings for micro-mechanical devices
TEXAS INSTRUMENTS INC163 citations99
US5482564AJan 9, 1996
Method of unsticking components of micro-mechanical devices
TEXAS INSTRUMENTS INC168 citations99
US5316793AMay 31, 1994
Directed effusive beam atomic layer epitaxy system and method
TEXAS INSTRUMENTS INC165 citations99
US6624944B1Sep 23, 2003
Fluorinated coating for an optical element
TEXAS INSTRUMENTS INC141 citations98
US6150242ANov 21, 2000
Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode
TEXAS INSTRUMENTS INC125 citations97
US5614785AMar 25, 1997
Anode plate for flat panel display having silicon getter
TEXAS INSTRUMENTS INC110 citations97
US6841439B1Jan 11, 2005
High permittivity silicate gate dielectric
TEXAS INSTRUMENTS INC52 citations96
US6552388B2Apr 22, 2003
Hafnium nitride gate dielectric
TEXAS INSTRUMENTS INC49 citations96
US5520563AMay 28, 1996
Method of making a field emission device anode plate having an integrated getter
TEXAS INSTRUMENTS INC51 citations96
US5453659ASep 26, 1995
Anode plate for flat panel display having integrated getter
TEXAS INSTRUMENTS INC89 citations96
US5689151ANov 18, 1997
Anode plate for flat panel display having integrated getter
TEXAS INSTRUMENTS INC66 citations95
US6784507B2Aug 31, 2004
Gate structure and method
TEXAS INSTRUMENTS INC19 citations93
US6436801B1Aug 20, 2002
Hafnium nitride gate dielectric
TEXAS INSTRUMENTS INC40 citations93
US6258637B1Jul 10, 2001
Method for thin film deposition on single-crystal semiconductor substrates
TEXAS INSTRUMENTS INC40 citations93
US6245606B1Jun 12, 2001
Low temperature method for forming a thin, uniform layer of aluminum oxide
TEXAS INSTRUMENTS INC21 citations93
US6020247AFeb 1, 2000
Method for thin film deposition on single-crystal semiconductor substrates
TEXAS INSTRUMENTS INC22 citations93
US5352330AOct 4, 1994
Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
TEXAS INSTRUMENTS INC33 citations93
US6335238B1Jan 1, 2002
Integrated dielectric and method
TEXAS INSTRUMENTS INC32 citations92
US6277681B1Aug 21, 2001
Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
TEXAS INSTRUMENTS INC18 citations92
US4567432AJan 28, 1986
Apparatus for testing integrated circuits
TEXAS INSTRUMENTS INC172 citations92
US6140243AOct 31, 2000
Low temperature process for post-etch defluoridation of metals
TEXAS INSTRUMENTS INC39 citations91
US7115461B2Oct 3, 2006
High permittivity silicate gate dielectric
TEXAS INSTRUMENTS INC13 citations84
US6071751AJun 6, 2000
Deuterium sintering with rapid quenching
TEXAS INSTRUMENTS INC17 citations84
US6420729B2Jul 16, 2002
Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics
TEXAS INSTRUMENTS INC6 citations74
US6274510B1Aug 14, 2001
Lower temperature method for forming high quality silicon-nitrogen dielectrics
TEXAS INSTRUMENTS INC6 citations73
US6143634ANov 7, 2000
Semiconductor process with deuterium predominance at high temperature
TEXAS INSTRUMENTS INC12 citations73
US6040230AMar 21, 2000
Method of forming a nano-rugged silicon-containing layer
TEXAS INSTRUMENTS INC7 citations73
US7030038B1Apr 18, 2006
Low temperature method for forming a thin, uniform oxide
TEXAS INSTRUMENTS INC2 citations63
US6897105B1May 24, 2005
Method of forming metal oxide gate structures and capacitor electrodes
TEXAS INSTRUMENTS INC5 citations62
US6613698B2Sep 2, 2003
Lower temperature method for forming high quality silicon-nitrogen dielectrics
TEXAS INSTRUMENTS INC3 citations62
US6468856B2Oct 22, 2002
High charge storage density integrated circuit capacitor
TEXAS INSTRUMENTS INC3 citations60
US6730977B2May 4, 2004
Lower temperature method for forming high quality silicon-nitrogen dielectrics
TEXAS INSTRUMENTS INC0 citations52
(unassigned)
2 patentsSAMSUNG ELECTRONICS CO LTD
2 patentsUNIV NORTH TEXAS
2 patentsUNIV TEXAS
1 patentCOLOMBO LUIGI
1 patentTEXAS INSTR CORPORATED
1 patentBORGWARNER INC
1 patentShowing the top 50 of 51 patents by PatentIndex Score.