Inventor
YAEGASHI SEIJI
JP18 patents
⚠️ This page may combine multiple inventors who share the name “YAEGASHI SEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EUDYNA DEVICES INC
4 patentsUS7592647B2Sep 22, 2009
Semiconductor device and manufacturing method thereof
EUDYNA DEVICES INC32 citations92
US8044433B2Oct 25, 2011
GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage
EUDYNA DEVICES INC10 citations84
US7723751B2May 25, 2010
Semiconductor device and fabrication method of the same
EUDYNA DEVICES INC9 citations84
US7728353B2Jun 1, 2010
Semiconductor device in which GaN-based semiconductor layer is selectively formed
EUDYNA DEVICES INC1 citations52
OKADA MASAYA
4 patentsUS8227810B2Jul 24, 2012
Semiconductor device and method for manufacturing same
OKADA MASAYA13 citations83
US8525184B2Sep 3, 2013
Semiconductor device and method for manufacturing same
OKADA MASAYA6 citations79
US8896058B2Nov 25, 2014
Semiconductor device and method for producing same
OKADA MASAYA6 citations72
US8941174B2Jan 27, 2015
Semiconductor device and method for producing the same
OKADA MASAYA2 citations61
SUMITOMO ELECTRIC INDUSTRIES
3 patentsUS6784064B2Aug 31, 2004
Heterojunction bipolar transistor and method of making heterojunction bipolar transistor
SUMITOMO ELECTRIC INDUSTRIES7 citations73
US6664610B2Dec 16, 2003
Bipolar transistor and the method of manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES2 citations62
US6531722B2Mar 11, 2003
Bipolar transistor
SUMITOMO ELECTRIC INDUSTRIES5 citations62