Inventor
LIM WOO CHANG
KR31 patents
⚠️ This page may combine multiple inventors who share the name “LIM WOO CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS9859333B2Jan 2, 2018
Magnetic memory devices having a perpendicular magnetic tunnel junction
SAMSUNG ELECTRONICS CO LTD42 citations94
US8847341B2Sep 30, 2014
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD4 citations83
US10784442B2Sep 22, 2020
Method of manufacturing a magnetoresistive random access memory device
SAMSUNG ELECTRONICS CO LTD1 citations71
US10892400B2Jan 12, 2021
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD4 citations70
US11665970B2May 30, 2023
Magnetoresistive random access memory (MRAM) device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11031549B2Jun 8, 2021
Magnetoresistive random access memory (MRAM) device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11127786B2Sep 21, 2021
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10734051B2Aug 4, 2020
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10482939B2Nov 19, 2019
Magnetic memory device and method of writing magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9343660B2May 17, 2016
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9048417B2Jun 2, 2015
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10847713B2Nov 24, 2020
Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device
SAMSUNG ELECTRONICS CO LTD0 citations49
PARK JEONG HEON
5 patentsUS9065039B2Jun 23, 2015
Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same
PARK JEONG HEON5 citations83
US8772846B2Jul 8, 2014
Magnetic tunneling junction devices, memories, memory systems, and electronic devices
PARK JEONG HEON4 citations83
US9356228B2May 31, 2016
Magnetic tunneling junction devices, memories, memory systems, and electronic devices
PARK JEONG HEON0 citations51
US8987798B2Mar 24, 2015
Magnetic tunneling junction devices, memories, memory systems, and electronic devices
PARK JEONG HEON0 citations51
US8947914B2Feb 3, 2015
Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same
PARK JEONG HEON1 citations51
LIM WOO-CHANG
2 patentsOH SECHUNG
2 patentsKIM WOOJIN
2 patentsLIM WOO CHANG
2 patentsUS9276198B2Mar 1, 2016
Magnetic memory devices
LIM WOO CHANG12 citations81
US8445981B2May 21, 2013
Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same
LIM WOO CHANG4 citations62