Inventor

UCHIDA MASAO

JP75 patents

⚠️ This page may combine multiple inventors who share the name “UCHIDA MASAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UCHIDA MASAO

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Semiconductor device

Method for growing semiconductor film and method for fabricating semiconductor device

Method for making insulated-gate semiconductor element

Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor

Semiconductor substrate, semiconductor device and method for fabricating the same

Equipment for communication system

Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate

Method and apparatus for activating semiconductor impurities

Method and device for activating semiconductor impurities

Electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode

Electron emission cathode having a semiconductor film; a device including the cathode; and a method for making the cathode

Silicon carbide semiconductor device and method for fabricating the same

Equipment for communication system and semiconductor integrated circuit device

SiC-MISFET and method for fabricating the same

Semiconductor device and method for fabricating the same

Field effect transistor and method of manufacturing the same

Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe

Device for implementing an inverter having a reduced size

High-breakdown-voltage insulated gate semiconductor device

High-breakdown-voltage insulated gate semiconductor device

Semiconductor device and method for manufacturing the same

PANASONIC CORP

Semiconductor device and method for manufacturing same

Semiconductor device and method for fabricating the same

Semiconductor element and electrical apparatus

Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor

Silicon carbide-oxide layered structure, production method thereof, and semiconductor device

Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence

Silicon carbide semiconductor device and process for producing the same

Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer

Semiconductor element

Silicon carbide semiconductor element

Semiconductor element and electrical apparatus

Semiconductor device and production method therefor

PANASONIC IP MAN CO LTD

Silicon carbide semiconductor device

Semiconductor element and method of manufacturing the same

Silicon carbide semiconductor device

Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, unit cells, source, and gate

Semiconductor device with first and second electrodes forming schottky junction with silicon carbide semiconductor layer and method of manufacturing the same

Semiconductor device and inverter using same

Semiconductor device and manufacturing method thereof

Silicon carbide semiconductor element and method for manufacturing the same

Semiconductor device having barrier region and edge termination region enclosing barrier region

Silicon carbide switching device with novel overvoltage detection element for overvoltage control

ADACHI KAZUHIRO

Semiconductor element, semiconductor device, and power converter

Semiconductor element, semiconductor device, and power converter

TEIJIN LTD

Method for treating metallic or ceramic surfaces at high temperatures

HASHIMOTO KOICHI

Semiconductor element, semiconductor device, and electric power converter

TAKAHASHI KUNIMASA

Silicon carbide semiconductor element

UCHIDA MASAO

Semiconductor element and manufacturing method therefor

IKEGAMI RYO

Semiconductor element and method of manufacturing thereof