Inventor
JUNG HANGI
KR11 patents
Patents
11 patentsUS9443565B2Sep 13, 2016
Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof
SAMSUNG ELECTRONICS CO LTD11 citations82
US10069495B2Sep 4, 2018
Semiconductor memory device for calibrating a termination resistance and a method of calibrating the termination resistance thereof
SAMSUNG ELECTRONICS CO LTD8 citations81
US9997221B2Jun 12, 2018
Delay locked loop circuit including an additive delay in a command path
SAMSUNG ELECTRONICS CO LTD2 citations71
US9978460B2May 22, 2018
Memory module including on-die termination circuit and control method thereof
SAMSUNG ELECTRONICS CO LTD4 citations71
US9564190B2Feb 7, 2017
Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof
SAMSUNG ELECTRONICS CO LTD3 citations71
US11874784B2Jan 16, 2024
Memory device performing self-calibration by identifying location information and memory module including the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US11567886B2Jan 31, 2023
Memory device performing self-calibration by identifying location information and memory module including the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US11159149B2Oct 26, 2021
Electronic device including level shifter
SAMSUNG ELECTRONICS CO LTD1 citations56
US12237049B2Feb 25, 2025
Semiconductor memory devices having efficient serializers therein for transferring data
SAMSUNG ELECTRONICS CO LTD0 citations49
US10491223B2Nov 26, 2019
Memory device including a delay locked loop and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10367490B2Jul 30, 2019
Electronic circuits for outputting post emphasis signals
SAMSUNG ELECTRONICS CO LTD0 citations45