Inventor
SEO JUNG-HUN
US25 patents
⚠️ This page may combine multiple inventors who share the name “SEO JUNG-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WISCONSIN ALUMNI RES FOUND
12 patentsUS9425351B2Aug 23, 2016
Hybrid heterostructure light emitting devices
WISCONSIN ALUMNI RES FOUND8 citations84
US9653640B2May 16, 2017
Metal-oxide-semiconductor field-effect phototransistors based on single crystalline semiconductor thin films
WISCONSIN ALUMNI RES FOUND2 citations73
US9337622B2May 10, 2016
Compact distributed bragg reflectors
WISCONSIN ALUMNI RES FOUND5 citations73
US8866154B2Oct 21, 2014
Lattice mismatched heterojunction structures and devices made therefrom
WISCONSIN ALUMNI RES FOUND6 citations73
US9006785B2Apr 14, 2015
Doped and strained flexible thin-film transistors
WISCONSIN ALUMNI RES FOUND3 citations63
US10749062B2Aug 18, 2020
Hybrid tandem solar cells with improved tunnel junction structures
WISCONSIN ALUMNI RES FOUND1 citations60
US10615574B2Apr 7, 2020
Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers
WISCONSIN ALUMNI RES FOUND1 citations59
US9850594B2Dec 26, 2017
Thermal diffusion doping of diamond
WISCONSIN ALUMNI RES FOUND0 citations52
US9704999B2Jul 11, 2017
Thin film transistors with trench-defined nanoscale channel lengths
WISCONSIN ALUMNI RES FOUND0 citations52
US9605359B2Mar 28, 2017
Thermal diffusion doping of diamond
WISCONSIN ALUMNI RES FOUND1 citations52
US9058993B2Jun 16, 2015
Methods for making large-area, free-standing metal oxide films
WISCONSIN ALUMNI RES FOUND0 citations52
US9899556B2Feb 20, 2018
Hybrid tandem solar cells with improved tunnel junction structures
WISCONSIN ALUMNI RES FOUND1 citations49
SAMSUNG ELECTRONICS CO LTD
10 patentsUS7279416B2Oct 9, 2007
Methods of forming a conductive structure in an integrated circuit device
SAMSUNG ELECTRONICS CO LTD7 citations74
US6955983B2Oct 18, 2005
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer
SAMSUNG ELECTRONICS CO LTD9 citations73
US10669631B2Jun 2, 2020
Gas injection apparatus and thin film deposition equipment including the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US8366827B2Feb 5, 2013
Chamber inserts and apparatuses for processing a substrate
SAMSUNG ELECTRONICS CO LTD5 citations68
US7439192B2Oct 21, 2008
Method of forming a layer on a semiconductor substrate
SAMSUNG ELECTRONICS CO LTD3 citations62
US7902090B2Mar 8, 2011
Method of forming a layer on a semiconductor substrate
SAMSUNG ELECTRONICS CO LTD1 citations52
US7547632B2Jun 16, 2009
Methods of forming metal layers in the fabrication of semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7384866B2Jun 10, 2008
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer
SAMSUNG ELECTRONICS CO LTD1 citations51
US6951814B2Oct 4, 2005
Methods for forming a metal wiring layer on an integrated circuit device at reduced temperatures
SAMSUNG ELECTRONICS CO LTD1 citations51
US7820244B2Oct 26, 2010
Method of forming a layer and method of removing reaction by-products
SAMSUNG ELECTRONICS CO LTD0 citations48